1.

Conference Proceedings
Conference Proceedings
1. Intrinsic defects in electron irradiated p-type GaAs
Jia,Y.Q. ; Bardeleben,H.J.von ; Stievenard,D. ; Delerue,C.
Pub. info.: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.2  pp.965-970,  1992.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 83-87
2.

Conference Proceedings
Conference Proceedings
2. Energy levels associated with the metastable state of EL2
Stievenard,D. ; Delerue,C. ; Bremond,G. ; Guillot,G. ; Azoulay,R. ; Bardeleben,H.J.von ; Bourgoin,J.C. ; Portal,J.C. ; Ranz,E.
Pub. info.: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.2  pp.911-916,  1992.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 83-87
3.

Conference Proceedings
Conference Proceedings
3. The Electron Irradiation Induced Defect E1,E2 in GaAs:Arsenic Frenkel Pair Versus Displaced Arsenic Antisite Model
Bardeleben,H.J.von ; Delerue,C. ; Stievenard,D.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.223-228,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
4.

Conference Proceedings
Conference Proceedings
4. Electrical Characterization of Surface Defects on Porous p-type Silicon
Cadet,C. ; Deresmes,D. ; Vuillaume,D. ; Stievenard,D. ; Grosman,A. ; Ortega,C. ; Siejka,J. ; Bardeleben,H.J.von
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.3  pp.1475-1480,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
5.

Conference Proceedings
Conference Proceedings
5. The EL2 Defect and the Isolated Arsenic Antisite Defect in GaAs
Bardeleben,H.J.von ; Bourgoin,J.C. ; Stievenard,D.
Pub. info.: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part1  pp.97-100,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 38-41