1.

Conference Proceedings
Conference Proceedings
1. Relaxation Mechanism of the Defect-Free 3C-SiC Epitaxial Films Grown on Step-Free 4H SiC Mesas
Du, H. ; Skowronski, M. ; Neudeck, P.G. ; Trunek, A.J. ; Spry, D.J. ; Powell, J.A.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.279-282,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy
Neudeck, P.G. ; Powell, J.A. ; Spry, D.J. ; Trunek, A.J. ; Huang, X. ; Vetter, W.M. ; Dudley, M. ; Skowronski, M. ; Liu, J.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.213-216,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436