1.

Conference Proceedings
Conference Proceedings
1. Electrical Properties of the La2O3/4H-SiC Interface Prepared by Atomic Layer Deposition Using La(iPrCp)3 and H2O
Moon, J.H. ; Eom, D.I. ; No, S.Y. ; Song, H.K. ; Yim, J.H. ; Na, H.J. ; Lee, J.B. ; Kim, H.J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1083-1086,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. 4H-SiC Planar MESFETs With fmax of 40 GHz Without Trapping Effect
Na, H.J. ; Jung, S.Y. ; Yim, J.H. ; Urn, M.Y. ; Song, H.K. ; Kim, H.J.
Pub. info.: State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia.  pp.441-445,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-06
3.

Conference Proceedings
Conference Proceedings
3. Fabrication and Characterization of 4H-SiC Planar MESFET Using Ion- Implantation
Na, H.J. ; Kim, D.H. ; Jung, S.Y. ; Song, I.B. ; Um, M.Y. ; Song, H.K. ; Jeong, J.K. ; Lee, J.B. ; Kim, H.J.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1181-1184,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
4.

Conference Proceedings
Conference Proceedings
4. Improvements in the Reverse Characteristics of 4H-SiC Schottky Barrier Diodes by Hydrogen Treatments
Kim, D.H. ; Na, H.J. ; Jung, S.Y. ; Song, I.B. ; Um, M.Y. ; Song, H.K. ; Jeong, J.K. ; Lee, J.B. ; Kim, H.J.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1001-1004,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
5.

Conference Proceedings
Conference Proceedings
5. Growth of GaN Films on Porous 4H-SiC Substrate by Metal-Organic Chemical Vapor Deposition
Jeong, J.K. ; Song, H.K. ; Um, M.Y. ; Kim, H.J. ; Seo, H.C. ; Yoon, E. ; Hwang, C.S.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1597-1600,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
6.

Conference Proceedings
Conference Proceedings
6. Homoepitaxial Growth of Iron-Doped 4H-SiC Using BTMSM and t-Butylferrocene Precursors for Semi-Insulating Property
Song, H.K. ; Moon, J.H. ; Yim, J.H. ; Kim, H.J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.215-218,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529