1.

Conference Proceedings
Conference Proceedings
1. Edge Termination Technique for SiC Power Devices
Kim, H.W. ; Bahng, W. ; Song, G.H. ; Kim, S.C. ; Kim, N.K. ; Kim, E.D.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1241-1244,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
2.

Conference Proceedings
Conference Proceedings
2. 4H-SiC p-n Diode using Internal Ring (IR) Termination Technique
Song, G.H. ; Kim, H.W. ; Bahng, W. ; Kim, S.C. ; Kim, N.K.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1041-1044,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
3.

Conference Proceedings
Conference Proceedings
3. Suppression of Macrostep Formation in 4H-SiC Using a Cap Oxide Layer
Bahng, W. ; Kim, N.-K. ; Kim, S.C. ; Song, G.H. ; Kim, E.-D.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.863-866,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
4.

Conference Proceedings
Conference Proceedings
4. Damage Relaxation Pre-Activation Anneal in Al-Implanted SiC
Bahng, W. ; Song, G.H. ; Kim, N.K. ; Kim, S.C. ; Seo, K.S. ; Kim, H.W. ; Kim, E.D.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.617-620,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
5.

Conference Proceedings
Conference Proceedings
5. Co-Formation of Gate Electrode and Ohmic Contacts in SiC Power MOSFETs
Song, G.H. ; Bahng, W. ; Kim, N.K. ; Kim, S.C. ; Seo, K.S. ; Kim, E.D.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.661-664,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436