1.

Conference Proceedings
Conference Proceedings
1. Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs - Challenges and Advances
Pantelides, S.T. ; Wang, S. ; Franceschetti, A. ; Buczko, R. ; Di Ventra, M. ; Rashkeev, S.N. ; Tsetseris, L. ; Evans, M.H. ; Batyrev, I.G. ; Feldman, L.C. ; Dhar, S. ; McDonald, K. ; Weller, R.A. ; Schrimpf, R.D. ; Fleetwood, D.M.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.935-948,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Dipoles in SiO2: Border Traps or Not?
Fleetwood, D.M. ; Rashkeev, S.N. ; Lu, Z.Y. ; Nicklaw, CJ. ; Felix, JA. ; Schrimpf, R.D. ; Pantelides, S.T.
Pub. info.: Silicon nitride and silicon dioxide thin insulating films VII : proceedings of the international symposium.  pp.291-307,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-2
3.

Conference Proceedings
Conference Proceedings
3. Hydrogen Model for Negative Bias Temperature Instabilities in MOS Gate Dielectrics
Fleetwood, D.M. ; Zhou, X.J. ; Tsetseris, L. ; Pantelides, S.T. ; Schrimpf, R.D.
Pub. info.: Silicon nitride, silicon dioxide thin insulating films, and other emerging dieletrics VIII : proceedings of the international symposium.  pp.267-278,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-01