1.

Conference Proceedings
Conference Proceedings
1. 45. TaN metal gate MOSFETs with aggressively scaled HfO2 dielectrics
Lander, R. ; Schram, T. ; Lulan, G.S. ; hooker, J. ; Vertommen, J. ; Lee, S. ; de Weerd, W. ; Boullart, W. ; van Elshocht, S ; Carter, R. ; Kubicek, S. ; Demeyer, K. ; De Gendt, S. ; Heyns, M.
Pub. info.: Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium.  pp.367-374,  2003.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-14
2.

Conference Proceedings
Conference Proceedings
2. 27 Materials Issues of Ni Fully Silicided (FUSI) Gates for CMOS Applications
Kittl, J. A. ; Lauwers, A. ; Pawlak, M. A. ; Demeurisse, C. ; Anil, K. G. ; Veloso, A. ; van Dal, M. J. H. ; Schram, T. ; Brijs, B. ; Kaiser, M. ; Kubicek, S. ; Cunniffe, J. ; Verbeeck, R. ; Vrancken, C. ; Biesemans, S. ; Maex, K.
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium.  pp.225-232,  2005.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-05
3.

Conference Proceedings
Conference Proceedings
3. 13 High-k Gate Stack Engineering - towards Meeting Low Standby Power and High Performance Targets
De Gendt, S. ; Brunco, D. ; Caymax, M. ; Canard, T. ; Date, L. ; Delabie, A. ; Deweerd, W. ; Groeseneken, G. ; Houssa, M. ; Hyun, S. ; Kaushik, V. ; Kubicek, S. ; Maes, J. ; Pantisano, L. ; Ragnarsson, L. ; Rohr, E. ; Schram, T. ; Shimamoto, Y. ; Sleeckx, E. ; Vandervorst, W. ; Van Elshocht, S. ; Yamamoto, K. ; Witters, T. ; Zhao, C. ; Zimmerman, P. ; Heyns, M. (Invited Paper)
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium.  pp.109-117,  2005.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-05
4.

Conference Proceedings
Conference Proceedings
4. (10.2) 1:45 -2:15 PM - GermaniumDeep-sub micron PMOS Transistors with Etched TaN Metal Gate on a High-K Dielectric, Fabricated in a 200mm Prototyping Line (Invited)
De Jaeger, M. Meuris B. ; Kubicek, S. ; Verheyena, P. ; Van Steenbergen, J. ; Lujan, G. ; Kunnen, E. ; Sleeckx, E. ; Teerlinck, I. ; Van Elshocht, S. ; Delabie, A. ; Lindsay, R. ; Satta, A. ; Schram, T. ; Chiarella, T. ; Degraeve, R. ; Richard, O.
Pub. info.: SiGe: materials, processing, and devices : proceedings of the First international symposium.  pp.693-700,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-07