1.

Conference Proceedings
Conference Proceedings
1. Impact of High-k Properties on MOSFET Electrical Characteristics
Pantisano, Ll. ; Ragnarsson, L. -A. ; Houssa, M. ; Degraeve, R. ; Groeseneken, G. ; Schram, T. ; Degendt, S. ; Heyns, M. ; Afanas'ev, V.
Pub. info.: Defects in high-κ gate dielectric stacks : nano-electronic semiconductor devices.  pp.97-109,  2006.  Dordrecht.  Springer
Title of ser.: NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.: 220
2.

Conference Proceedings
Conference Proceedings
2. On the impact of high-K properties (and defects) on MOSFET el ectrical characteristics (invited paper)
Pantisano, L. ; Afanas'ev, V. ; Ragnarsson, L-A. ; Houssa, M. ; Degraeve, R. ; Groeseneken, G. ; Schram, T. ; DeGendt, S. ; Heyns, M.
Pub. info.: Crystalline defects and contamination: their impact and control in device manufacturing IV : DECON 2005 : proceedings of the Satellite Symposium to ESSDERC 2005, Grenoble, France.  pp.144-158,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-10
3.

Conference Proceedings
Conference Proceedings
3. (10.2) 1:45 -2:15 PM - GermaniumDeep-sub micron PMOS Transistors with Etched TaN Metal Gate on a High-K Dielectric, Fabricated in a 200mm Prototyping Line (Invited)
De Jaeger, M. Meuris B. ; Kubicek, S. ; Verheyena, P. ; Van Steenbergen, J. ; Lujan, G. ; Kunnen, E. ; Sleeckx, E. ; Teerlinck, I. ; Van Elshocht, S. ; Delabie, A. ; Lindsay, R. ; Satta, A. ; Schram, T. ; Chiarella, T. ; Degraeve, R. ; Richard, O.
Pub. info.: SiGe: materials, processing, and devices : proceedings of the First international symposium.  pp.693-700,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-07