1.

Conference Proceedings
Conference Proceedings
1. Red surface emitters: powerful and fast
Schweizer, H. ; Ballmann, T. ; Butendeich, R. ; Rossbach, R. ; Raabe, B. ; Jetter, M. ; Scholz, F.
Pub. info.: Semiconductor optoelectronic devices for lightwave communication :8-10 September 2003, Orlando, Florida, USA.  pp.103-116,  2003.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5248
2.

Conference Proceedings
Conference Proceedings
2. Nanometer Structures for Optics
Schweizer, H. ; Griesinger, U. ; Gauggel, H.P. ; Hofmann, R. ; Wang, J. ; Lichtenstein, N. ; Burkard, M. ; Kuhn, J. ; Geng, C. ; Geiger, M. ; Off, J. ; Scholz, F.
Pub. info.: Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors.  pp.210-239,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-2
3.

Conference Proceedings
Conference Proceedings
3. NEW GROUP III PRECURSORS FOR THE MOVPE OF GaAs AND InP BASED MATERIAL
Hostalek, M. ; Pohl, L. ; Brauers, A. ; Balk, P. ; Frese, V. ; Hardtdegen, H. ; Hovel, R. ; Regel, G. K. ; Molassioti, A. ; Moser, M. ; Scholz, F. ; Schumann, H. ; Hartmann, K. U,. ; Wassermann, W.
Pub. info.: III-V heterostructures for electronic/photonic devices : symposium held April 24-27, 1989, San Diego, California, U.S.A..  pp.205-210,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 145
4.

Conference Proceedings
Conference Proceedings
4. Effects of Birefringence in Ordered GaInP/AlGaInP Lasers
Moritz, A. ; Wirth, R. ; Geng, C. ; Scholz, F. ; Hangleiter, A.
Pub. info.: Optoelectronic materials : ordering, composition modulation, and self-assembled structures : symposium held November 28-30, 1995, Boston, Massachusetts, U.S. ..  pp.97-,  1996.  Pittsburgh, Pennsylvania..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 417
5.

Conference Proceedings
Conference Proceedings
5. OPTICAL AND CYCLOTRON RESONANCE INVESTIGATIONS ON GaInP/GaAs EPITAXIAL LAYERS
Emanuelsson, P. ; Drechsler, M. ; Hofmann, D. M. ; Meyer, B. K. ; Moser, M. ; Scholz, F.
Pub. info.: Growth, processing, and characterization of semiconductor heterostructures : Symposium held November 29-December 2, 1993, Massachusetts, U.S.A..  pp.543-,  1994.  Pittsburgh.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 326
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Conference Proceedings
Conference Proceedings
6. DEFECT REDUCTION BY THERMAL CYCLIC GROWTH IN GaAs GROWN ON Si BY MOVPE
Kurner, W. ; Dieter, R. ; Zieger, K. ; Goroncy, F. ; Dornen, A. ; Scholz, F.
Pub. info.: Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A..  pp.437-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 325
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Conference Proceedings
Conference Proceedings
7. OPTICAL INVESTIGATION OF STRAINED-LAYER GaInAs/GaInAsP HETEROSTRUCTURES
Queisser, I. ; Harle, V. ; Dornen, A. ; Scholz, F.
Pub. info.: Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A..  pp.507-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 325
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Conference Proceedings
Conference Proceedings
8. Mechanisms of Strain Reduction in GaN and AlGaN/GaN Epitaxial Layers
Gfrorer, O. ; Schlusener, T. ; Harle, V. ; Scholz, F. ; Hangleiter, A.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.429-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
9.

Conference Proceedings
Conference Proceedings
9. Phonons and free carriers in a strained hexagonal GaN-AlN superlattice measured by infrared ellipsometry and raman spectroscopy
Schubert, M. ; Kasic, A. ; Tiwald, T. E. ; Woollam, J. A. ; Harle, V. ; Scholz, F.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.39.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
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Conference Proceedings
Conference Proceedings
10. Excitation and de-excitation mechanisms of rare-earth ions in III-V compounds: optically detected microwave-induced impact ionization of Yb dopant in InP
Gregorkiewicz, T. ; Liesert, B. J. Heijmink ; Tsimperidis, I. ; Matt-Gersdorf, I. De ; Ammerlaan, C. A. J. ; Godlewski, M. ; Scholz, F.
Pub. info.: Rare earth doped semiconductors : symposium held April 13-15, 1993, San Francisco, California, U.S.A..  pp.239-,  1993.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 301
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Conference Proceedings
Conference Proceedings
11. Piezoelectric Field Effect on Optical Properties of GaN/GaInN/AlGaN Quantum Wells
Im. J. S. ; Kollmer, H. ; Gfrorer, O. ; Off, J. ; Scholz, F. ; Hangleiter, A.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G6.20.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
12.

Conference Proceedings
Conference Proceedings
12. Metalorganic Vapor-Phase-Epitaxial Growth of GaInN/GaN Heterostructures and Quantum Wells
Scholz, F. ; Harle, V. ; Steuber, F. ; Sohmer, A. ; Bolay, H. ; Syganow, V. ; Dornen, A. ; Im, J-S. ; Hangleiter, A. ; Duboz, J-Y. ; Galtier, P. ; Rosencher, E. ; Ambacher, O. ; Brunner, D. ; Lakner, H.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.3-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
13.

Conference Proceedings
Conference Proceedings
13. Sign of the piezoelectric field in asymmetric GaInN/AlGaN/GaN single and double quantum wells on SiC
Im, J. S. ; Hangleiter, A. ; Off, J. ; Scholz, F.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.28.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
14.

Conference Proceedings
Conference Proceedings
14. Defect States in SiC/GaN- and SiC/AlGaN/GaN-Heterostructures Characterized by Admittance and Photocurrent Spectroscopy
Witte, H. ; Krtschil, A. ; Lisker, M. ; Christen, J. ; Scholz, F. ; Off, J.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.71.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
15.

Conference Proceedings
Conference Proceedings
15. Structural and Optical Properties of Group-III Nitride Quantum Wells Strudied by (S)TEM and CL
Lakner, H. ; Liu, Q. ; Brockt, G. ; Radefeld, A. ; Schulze-Kraasch, F. ; Scholz, F.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.351-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
16.

Conference Proceedings
Conference Proceedings
16. DLTS and CV Analysis of Doped and N-Implanted GaN
Haase, D. ; Schmid, M. ; Dornen, A. ; Harle, V. ; Bolay, H. ; Scholz, F. ; Burkard, M. ; Schweizer, H.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.531-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
17.

Conference Proceedings
Conference Proceedings
17. Effects of Piezoelectric Fields in GalnN/GaN and GaN/AlGaN Heterostructures and Quantum Wells
Im, Jin Seo ; Kollmer, H. ; Off, J. ; Sohmer, A. ; Scholz, F. ; Hangleiter, A.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.513-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
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Conference Proceedings
Conference Proceedings
18. Low thermal expansion substrate material for EUVL components application
Scholze, F. ; Laubis, C. ; Buchholz, C. ; Fischer, A. ; Ploger, S. ; Scholz, F. ; Wagner, H. ; Ulm, G.
Pub. info.: Emerging lithographic technologies IX : 1-3 March 2005, San Jose, California, USA.  pp.146-157,  2005.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5751
19.

Conference Proceedings
Conference Proceedings
19. IR-VUV Dielectric Function of Al1-xInxN Determined by Spectroscopic Ellipsometry
Kasic, A. ; Schubert, M. ; Rheinlaender, B. ; Off, J. ; Scholz, F. ; Herzinger, C. M.
Pub. info.: GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 639
20.

Conference Proceedings
Conference Proceedings
20. Influence of Exciton Ionization on Recombination Dynamics in InGaAs/InP Quantum Wells
Michler, P. ; Hangleiter, A. ; Moritz, A. ; Harle, V. ; Streubel, K. ; Scholz, F.
Pub. info.: Proceedings of the Symposium on Logic and Functional Devices for Photonics and the seventeenth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XVII).  pp.220-226,  1993.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1993-10
21.

Conference Proceedings
Conference Proceedings
21. Quantum dot lasers
Schweizer, H. ; Wang, J. ; Griesinger, U. ; Burkard, M. ; Porsche, J. ; Geiger, M. ; Scholz, F. ; Riedl, T. ; Hangleiter, A.
Pub. info.: Frontiers of Nano-Optoelectronic Systems.  pp.65-84,  2000.  Dordrecht, MA.  Kluwer Academic Publishers
Title of ser.: NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.: 6
22.

Conference Proceedings
Conference Proceedings
22. Channeling Defects In Group-III Nitrides During Dry Etching Processes
Breitschadel, Oliver ; Hsieh, J.T. ; Kuhn, B. ; Scholz, F. ; Schweizer, H.
Pub. info.: Wide-bandgap electronic devices.  pp.T6.33-,  2001.  Warrendale, PA..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 622
23.

Conference Proceedings
Conference Proceedings
23. Short Gate Length AlGaN/GaN HEMTs
Breitschadel, Oliver ; Kley, L. ; Grabeldinger, H. ; Kuhn, B. ; Scholz, F. ; Schweizer, H.
Pub. info.: Wide-bandgap electronic devices.  pp.T6.29-,  2001.  Warrendale, PA..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 622
24.

Conference Proceedings
Conference Proceedings
24. Ordering and Strain in GaxIn1-xP Quantum Wells
Geng, C. ; Moser, M. ; Winterhoff, R. ; Lux, E. ; Hommel, J. ; Hohing, B. ; Schweizer, H. ; Scholz, F.
Pub. info.: Proceedings of the Symposium on Large Area Wafer Growth and Processing for Electronic and Photonic Devices and the twentieth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XX).  pp.268-274,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-18
25.

Conference Proceedings
Conference Proceedings
25. Post Epitaxial Disordering of CuPtB Ordered AlGaInP/GaInP for Microstructuring
Burkard, M. ; Englert, A. ; Geng, C. ; Scholz, F. ; Schweizer, H.
Pub. info.: Optoelectronic materials : ordering, composition modulation, and self-assembled structures : symposium held November 28-30, 1995, Boston, Massachusetts, U.S. ..  pp.67-,  1996.  Pittsburgh, Pennsylvania..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 417
26.

Conference Proceedings
Conference Proceedings
26. Optical Properties of Ordered GaInP
Ernst, P. ; Geng, C. ; Hahn, G. ; Scholz, F. ; Schweizer, H. ; Zhang, Yong ; Mascarenhas, A.
Pub. info.: Optoelectronic materials : ordering, composition modulation, and self-assembled structures : symposium held November 28-30, 1995, Boston, Massachusetts, U.S. ..  pp.19-,  1996.  Pittsburgh, Pennsylvania..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 417
27.

Conference Proceedings
Conference Proceedings
27. A Polarization Study of Ordered GaInP2
Zhang, Yong ; Ernst, P. ; Driessen, F. A. J. M. ; Mascarenhas, A. ; Geng, C. ; Scholz, F. ; Schweizer, H.
Pub. info.: Optoelectronic materials : ordering, composition modulation, and self-assembled structures : symposium held November 28-30, 1995, Boston, Massachusetts, U.S. ..  pp.61-,  1996.  Pittsburgh, Pennsylvania..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 417
28.

Conference Proceedings
Conference Proceedings
28. Yellow Luminescence and Associated ODMR in MOVPE GaN: A Comparison of Defect Models
Mason, P. W. ; Dornen, A. ; Harle, V. ; Scholz, F. ; Watkins, G. D.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.793-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
29.

Conference Proceedings
Conference Proceedings
29. Near-Bandgap Photoluminescence Decay Time in GaN Epitaxial Layers Grown on Sapphire
Hangleiter, A. ; Im, J. S. ; Forner, T. ; Harle, V. ; Scholz, F.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.559-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
30.

Conference Proceedings
Conference Proceedings
30. MOVPE of rare earth doped III-V semiconductors
Scholz, F. ; Weber, J. ; Pressel, K. ; Dornen, A.
Pub. info.: Rare earth doped semiconductors : symposium held April 13-15, 1993, San Francisco, California, U.S.A..  pp.3-,  1993.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 301
31.

Conference Proceedings
Conference Proceedings
31. Fermi level pinning at GaN-interfaces: Correlation of electrical admittance and transient spectroscopy
Witte, H. ; Krtschil, A. ; Lisker, M. ; Rudloff, D. ; Christen, J. ; Krost, A. ; Stutzmann, M. ; Scholz, F.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.82.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
32.

Conference Proceedings
Conference Proceedings
32. Spontaneous and Stimulated Recombination in the Nitrides
Hangleiter, A. ; Scholz, F. ; Harle, V. ; Im, J-S. ; Frankowsky, G.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.641-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
33.

Conference Proceedings
Conference Proceedings
33. Influence of Surface Defects on the Characteristics of GaN Schottky Diodes
Duboz, J-Y. ; Binet, F. ; Laurent, N. ; Rosencher, E. ; Scholz, F. ; Harle, V. ; Briot, O. ; Gil, B. ; Aulombard, R. L.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.1085-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
34.

Conference Proceedings
Conference Proceedings
34. Realization and Characterization of Optically-Pumped GaInN-DFB Lasers
Hofmann, R. ; Wagner, V. ; Gauggel, H-P. ; Adler, F. ; Ernst, P. ; Sohmer, A. ; Bolay, H. ; Scholz, F. ; Schweizer, H.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.1197-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
35.

Conference Proceedings
Conference Proceedings
35. GaAs Solar Cells Grown by MOVPE on Silicon Substrates: Development Status
Frese, V. ; Hilgarth, J. ; Braun, M. ; Zieger, K. ; Strauss, P. ; Dieter, R.J. ; Scholz, F.
Pub. info.: Proceedings of the European Space Power Conference, Poitiers, France, 4-8 September 1995.  pp.479-482,  1995.  Noordwijk, Netherlands.  ESA Publications Division
Title of ser.: ESA SP
Ser. no.: 369
36.

Conference Proceedings
Conference Proceedings
36. The Structure Investigation of Copper, Nickel and Iron Hexacyanometalates from Conventional X-Ray Powder Diffraction Data
Petrovic-Prelevic, I. ; Widmann, A. ; Kahlert, H. ; Wulff, H. ; Scholz, F.
Pub. info.: EPDIC 8 : proceedings of the eighth European Powder Diffraction Conference, held May 23-26, 2002 in Uppsala, Sweden.  pp.345-348,  2004.  Zuerich-Uetikon, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 443-444
37.

Conference Proceedings
Conference Proceedings
37. Generalized ellipsometry of complex mediums in layered systems (Key Lecture)
Schubert, M. ; Kasic, A. ; Hofmann, T. ; Gottschalch, V. ; Off, J. ; Scholz, F. ; Schubert, E. ; Neumann, H. ; Hodgkinson, I.J. ; Arnold, M.D. ; Dollase, W.A. ; Herzinger, C.M.
Pub. info.: Complex mediums III : beyond linear isotropic dielectrics : 8-10 July 2002, Seattle, [Washington] USA.  pp.264-276,  2002.  Bellingham, Washington.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4806
38.

Conference Proceedings
Conference Proceedings
38. Red light VCSEL for high-temperature applications (Invited Paper)
Jetter, M. ; Rossbach, R. ; Butendeich, R. ; Scholz, F. ; Ballmann, T. ; Schweizer, H. C.
Pub. info.: Physics and Applications of Optoelectronic Devices.  pp.141-154,  2004.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5594
39.

Conference Proceedings
Conference Proceedings
39. Characterization of large off-axis EUV mirrors with high accuracy reflectometry at PTB[6151-18]
Laubis, C. ; Buchholz, C. ; Fischer, A. ; Ploger, S. ; Scholz, F. ; Wagner, H. ; Scholze, F. ; Ulm, G. ; Enkisch, H. ; Mullender, S. ; Wedowski, M. ; Louis, E. ; Zoethout, E.
Pub. info.: Emerging Lithographic Technologies X.  pp.615101-,  2006.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 6151
40.

Conference Proceedings
Conference Proceedings
40. Characterization of a laser-produced plasma source for a laboratory EUV reflectometer
Scholze, F. ; Scholz, F. ; Tuemmler, J. ; Ulm, G. ; Legall, H. ; Nickles, P.-V. ; Sandner, W. ; Stiel, H. ; Loyen, L.
Pub. info.: Emerging Lithographic Technologies VII.  2  pp.670-681,  2003.  Bellingham, WA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5037
41.

Conference Proceedings
Conference Proceedings
41. Characterization of the PTB EUV reflectometry facility for large EUVL optical components
Tuemmler, J. ; Blume, H. ; Brandt, G. ; Eden, J. ; Meyer, B. ; Scherr, H. ; Scholz, F. ; Scholze, F. ; Ulm, G.
Pub. info.: Emerging Lithographic Technologies VII.  1  pp.265-273,  2003.  Bellingham, WA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5037
42.

Conference Proceedings
Conference Proceedings
42. High-accuracy detector calibration for EUV metrology at PTB
Scholze, F. ; Brandt, G.M. ; Mueller, P. ; Meyer, B. ; Scholz, F. ; Tuemmler, J. ; Vogel, K. ; Ulm, G.
Pub. info.: Emerging Lithographic Technologies VI.  Part Two  pp.680-689,  2002.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4688
43.

Conference Proceedings
Conference Proceedings
43. Red VCSEL for automotive applications
Rossbach, R. ; Ballmann, T. ; Butendeich, R. ; Scholz, F. ; Schweizer, H. ; Jetter, M.
Pub. info.: Photonics in the Automobile.  pp.135-146,  2005.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5663
44.

Conference Proceedings
Conference Proceedings
44. New PTB reflectometer for the characterization of large optics for the extreme-ultraviolet spectral region
Tuemmler, J. ; Scholze, F. ; Brandt, G.M. ; Meyer, B. ; Scholz, F. ; Vogel, K. ; Ulm, G. ; Poier, M. ; Klein, U. ; Diete, W.
Pub. info.: Emerging Lithographic Technologies VI.  Part One  pp.338-347,  2002.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4688
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Conference Proceedings
Conference Proceedings
45. Absorption in InGaN-on-sapphire LED structures: comparison between photocurrent measurement method (PMM) and photothermal deflection spectroscopy (PDS)
Schad, S.S. ; Neubert, B. ; Bruening, J. ; Eichler, C. ; Habel, F. ; Scholz, F. ; Unger, P. ; Hofstetter, D.
Pub. info.: Light-Emitting Diodes: Research, Manufacturing, and Applications VIII.  pp.109-117,  2004.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5366