1.

Conference Proceedings
Conference Proceedings
1. Calculated Thermodynamic Potentials for the Vacancy and the Oxygen A-Center in Silicon
Biernacki,S. ; Scherz,U. ; Gillert,R. ; Scheffler,M.
Pub. info.: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part2  pp.625-630,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 38-41
2.

Conference Proceedings
Conference Proceedings
2. Parameter-Free Calculations of the Pressure Dependence of Impurity Levels,Entropies and of Defect-Formation Volumes
Weider,D. ; Scheffler,M. ; Scherz,U.
Pub. info.: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part1  pp.299-304,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 38-41
3.

Conference Proceedings
Conference Proceedings
3. Pressure Dependences of Transition Energies of the As Antisite and the Ga-Vacancy-As-Interstitital Pair Compared to Stable and Metastable EL2
Ziegler,C. ; Scherz,U. ; Scheffler,M.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.2  pp.995-1000,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147