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Conference Proceedings

1. High-Current, NO-Annealed Lateral 4H-SiC MOSFETs

Das, M.K. ; Chung, G.Y. ; Williams, J.R. ; Saks, N.S. ; Lipkin, L.A. ; Palmour, J.W.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.981-984, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

2. High-Current, NO-Annealed Lateral 4H-SiC MOSFETs

Das, M.K. ; Chung, G.Y. ; Williams, J.R. ; Saks, N.S. ; Lipkin, L.A. ; Palmour, J.W.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.981-984, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393