1.

Conference Proceedings
Conference Proceedings
1. Positron Lifetime in Si Multivacancies
Saito,M. ; Oshiyama,A.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1135-1140,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
2.

Conference Proceedings
Conference Proceedings
2. Atomic Geometry and its Stability of Oxygen Impurities in Silicon
Saito,M. ; Oshiyama,A.
Pub. info.: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part2  pp.655-660,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 38-41
3.

Conference Proceedings
Conference Proceedings
3. First-Principles Calculation on Hydrogen Passivation Mechanism in Mg Doped GaN
Okamoto,Y. ; Saito,M. ; Oshiyama,A.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.981-986,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201