1.

Conference Proceedings
Conference Proceedings
1. Effect of Phosphorus Implantation Prior to Oxidation on Electrical Properties of Thermally Grown SiO2/4H-SiC MOS Structures
A. Mikhaylov ; T. Sledziewski ; A. Afanasyev ; V. Luchinin ; S. Reshanov
Pub. info.: HeteroSiC & WASMPE 2013 : Selected, peer reviewed papers from the 5th Edition of International Workshop on Silicon Carbide Hetero-Epitaxy and Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC-WASMPE 2013), June 17-19, 2013, Nice, France.  pp.133-138,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 806
2.

Conference Proceedings
Conference Proceedings
2. Reduction of Density of 4H-SiC / SiO2 Interface Traps by Pre-Oxidation Phosphorus Implantation
T. Sledziewski ; A. Mikhaylov ; S. Reshanov ; A. Schöner ; H.B. Weber
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.575-578,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780