1.

Conference Proceedings
Conference Proceedings
1. Reduced Pressure-Chemical Vapor Deposition of Ge Thick Layers on Si(001) for Microelectronics and Optoelectronics Purposes
Hartmann, J.M. ; Papon, A.M. ; Holliger, P. ; Rolland, G. ; Billon, T. ; Rouviere, M. ; Vivien, L. ; Laval, S.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.147-152,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809
2.

Conference Proceedings
Conference Proceedings
2. Reduced Pressure-Chemical Vapor Deposition of High Ge Content (20%-55%) SiGe Virtual Substrates
Bogumilowicz, Y. ; Hartmann, J.M. ; Laugier, F. ; Rolland, G. ; Billon, T. ; Renard, V. ; Olshanetsky, E.B. ; Estibals, O. ; Kvon, Z.D. ; Portal, J.C.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.45-50,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809
3.

Conference Proceedings
Conference Proceedings
3. (9.4) 11:40 - 12:00 PM - High Ge Content Si/SiGe Heterostructures for Microelectronics and Optoelectronics Purposes
Bogumilowicz, Y. ; Hartmann, J.M. ; Damlencourt, J.F. ; Vandelle, B. ; Abbadie, A. ; Papon, A.-M. ; Rolland, G. ; Holliger, P. ; Di Nardo, C. ; Besson, P. ; Ernst, T. ; Billon, T. (CEA-LETI)
Pub. info.: SiGe: materials, processing, and devices : proceedings of the First international symposium.  pp.665-680,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-07