1.

Conference Proceedings
Conference Proceedings
1. AlGaN/GaN Heterojunction Bipolar Transistor: Limiting Factors and Optimum Design for High Frequency Performances
Monier, C. ; Baca, A.G. ; Pearton, S.J. ; Ren, F. ; Chang, P.C. ; Zhang, L. ; LaRoche, J.R. ; Han, J. ; Shut, R.J.
Pub. info.: Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium.  pp.34-42,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-1
2.

Conference Proceedings
Conference Proceedings
2. High density plasma damage induced in n-GaN schottky diodes using Cl2/Ar discharges
Zhang, A. P. ; Dang, G. ; Ren, F. ; Cao, X. A. ; Cho, H. ; Lambers, E. S. ; Pearton, S. J. ; Shul, R. J. ; Zhang, L. ; Baca, A. G. ; Hickman, R. ; Hove, J. M. Van
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.66.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
3.

Conference Proceedings
Conference Proceedings
3. High-density plasma-induced etch damage of GaN
Shul, R.J. ; Zhang, L. ; Baca, A.G. ; Willison, C.G. ; Han, J. ; Pearton, S.J. ; Ren, F. ; Zolper, J.C. ; Lester, L.F.
Pub. info.: Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A..  pp.271-280,  1999.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 573
4.

Conference Proceedings
Conference Proceedings
4. Surface conversion effects in plasma-damaged p-GaN
Cao, X. A. ; Pearton, S. J. ; Dang, G. T. ; Zhang, A. P. ; Ren, F. ; Shul, R. J. ; Zhang, L. ; Hickman, R. ; Hove, J. M. Van
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W10.8.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
5.

Conference Proceedings
Conference Proceedings
5. Current Gain Simulation Of Npn AlGaN/GaN Heterojunction Bipolar Transistors
Monier, C. ; Pearton, S.J. ; Baca, Albert G. ; Chang, P.C. ; Zhang, L. ; Han, J. ; Shul, R.J. ; Ren, F. ; LaRoche, J.
Pub. info.: Wide-bandgap electronic devices.  pp.T3.3-,  2001.  Warrendale, PA..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 622
6.

Conference Proceedings
Conference Proceedings
6. Inductively Coupled High-Density Plasma-Induced Etch Damage Of GaN MESFETs
Shul, Randy J. ; Zhang, L. ; Baca, A.G. ; Willison, Christi G. ; Hans, J. ; Pearton, S.J. ; Lee, K.P. ; Ren, F.
Pub. info.: Wide-bandgap electronic devices.  pp.T7.5-,  2001.  Warrendale, PA..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 622