1.

Conference Proceedings
Conference Proceedings
1. GaN Metal Oxide Semiconductor Field Effect Transistors
Ren, F. ; Pearton, S.J. ; Abernathy, C.R. ; Baca, A.G. ; Cheng, P. ; Han, J. ; Shul, R.J. ; Chu, S.N.G. ; Hong, M. ; Lothian, J.R.
Pub. info.: Proceedings of the State-of-the-Art Program on Compound Semiconductors (SOTAPOCs XXX).  pp.169-173,  1999.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-4
2.

Conference Proceedings
Conference Proceedings
2. Low Dit Dielectric/GaN MOS Systems
Hong, M. ; Ng, H.M. ; Kwo, J. ; Kortan, A.R. ; Baillargeon, J.N. ; Chu, S.N.G. ; Mannaerts, J.P. ; Cho, A.Y. ; Ren, F. ; Abernathy, C.R. ; Pearton, S.J. ; Chyi, J.I.
Pub. info.: Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium.  pp.103-109,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-1
3.

Conference Proceedings
Conference Proceedings
3. *Temperature Effect of Metal contacts on GaN
Ren, F. ; Chu, S.N.G. ; Lothian, J.R. ; Pearton, S.J. ; Abernathy, C.R. ; Baca, A.G. ; Han, J. ; Schurman, M.J. ; Hong, M. ; Cao, X.A. ; Gila, B.P. ; Ake, T.M.
Pub. info.: Proceedings of the third Symposium on III-V Nitride Materials and Processes.  pp.201-207,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-18
4.

Conference Proceedings
Conference Proceedings
4. GaAs MOSFET - Achievements and Challenges
Hong, M. ; Baillargeon, J.N. ; Kwo, J. ; Kortan, A.R. ; Mannaerts, J.P. ; Cho, A.Y. ; Wang, Y.C. ; Ren, F.
Pub. info.: Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium.  pp.292-304,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-1
5.

Conference Proceedings
Conference Proceedings
5. Ga2O3(Gd2O3) as a Gate Dielectric for GaAs MOSFETs
Hong, M. ; Kwo, J. ; Liu, C.T. ; Marcus, M.A. ; Lay, T.S. ; Ren, F. ; Mannaerts, J.P. ; Ng, K.K. ; Chen, Y.K. ; Chou, L.J. ; Hsieh, K.C. ; Cheng, K.Y.
Pub. info.: Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors.  pp.434-442,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-2
6.

Conference Proceedings
Conference Proceedings
6. Metal Contact on Nitride-Based Materials
Ren, F. ; Abernathy, C. R. ; Shurman, M. ; Hong, M. ; Pearton, S. J. ; Lothian, J. R.
Pub. info.: Advanced interconnects and contact materials and processes for future integrated circuits : symposium held April 13-16, 1998, San Francisco, California, U.S.A..  pp.451-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 514
7.

Conference Proceedings
Conference Proceedings
7. Dielectrics for GaN-Based MIS Diodes
Ren, F. ; Abernathy, C. R. ; MacKenzie, J. D. ; Gila, B. P. ; Pearton, S. J. ; Hong, M. ; Macos, M. ; Schurman, M. J. ; Baca, A. G. ; Shul, R. J.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.443-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483