1.

Conference Proceedings
Conference Proceedings
1. The use of amorphous SiO and SiO2 to passivate AuGe based ohmic contact for GaAs ICs
LaRoche, J.R. ; Ren, F. ; Lothian, J.R. ; Hong, J. ; Lambers, E. ; Pearton, S.J.
Pub. info.: Compound semiconductor power transistors and : State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIX).  pp.238-244,  1998.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-12
2.

Conference Proceedings
Conference Proceedings
2. Cl2-Based ECR Etching of InGaP, AlInP and AlGaP
Hong, J. ; Lee, J. W. ; Pearton, S. J. ; Santana, C. ; Abernathy, C. R. ; Hobson, W. S. ; Ren, F.
Pub. info.: Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A..  pp.303-,  1996.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 421
3.

Conference Proceedings
Conference Proceedings
3. Development of GaN and InGaN Gratings by Dry Etching
Lee, J. W. ; Hong, J. ; MacKenzie, J. D. ; Abernathy, C. R. ; Pearton, S. J. ; Ren, F. ; Sciortino, P. F., Jr.
Pub. info.: Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.379-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 468
4.

Conference Proceedings
Conference Proceedings
4. Wet and dry etching characteristics of electron beam deposited SiO and SiO2
LaRoche, J.R. ; Ren, F. ; Lothian, J.R. ; Hong, J. ; Pearton, S.J. ; Lambers, E.
Pub. info.: Compound semiconductor surface passivation and novel device processing : symposium held April 5-7, 1999, San Francisco, California, U.S.A..  pp.259-264,  1999.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 573