1.

Conference Proceedings
Conference Proceedings
1. Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes
Raineri, V. ; Roccaforte, F. ; Libertino, S. ; Ruggiero, A. ; Massimino, V. ; Calcagno, L.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1167-1170,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Characterization of Silicon Carbide Electrochemical Etch in Hydrofluoric Acid Aqueous Solution
D'Arrigo, G. ; Bougiorno, C. ; Raineri, V.
Pub. info.: State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia.  pp.130-135,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-11
3.

Conference Proceedings
Conference Proceedings
3. AVOIDING DISLOCATION FORMATION FOR B, P, AND As IMPLANTS IN SILICON
Liefting, J. R. ; Raineri, V. ; Schreutelkamp, R. J. ; Custer, J. ; Saris, F. W.
Pub. info.: Phase formation and modification by beam-solid interactions : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A..  pp.173-178,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 235
4.

Conference Proceedings
Conference Proceedings
4. Localized Lifetime Control in silicon Bipolar Power Devices by Voids Induced by He Ion Implantation
Saggio, M. ; Raineri, V. ; Frisina, F. ; Rimini, E.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.45-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
5.

Conference Proceedings
Conference Proceedings
5. Kinetics of the C49-C54 Transformation in Patterned and Blanket TiSi2 Films: A Comparison
Via, F. La ; Privitera, S. ; Grimaldi, M. G. ; Raineri, V. ; Galli, M. ; Marabelli, F. ; Iannuzzi, M. ; Miglio, L.
Pub. info.: Advanced interconnects and contact materials and processes for future integrated circuits : symposium held April 13-16, 1998, San Francisco, California, U.S.A..  pp.219-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 514
6.

Conference Proceedings
Conference Proceedings
6. Functional Voids By Gas Ion Implantation For Applications In Semiconductor Processing
Raineri, V. ; Rimini, E.
Pub. info.: Defect and impurity engineered semiconductors and devices III : symposium held April 1-5, 2002, San Francisco, California, U.S.A..  pp.205-216,  2002.  Warrendale, Pa.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 719
7.

Conference Proceedings
Conference Proceedings
7. Quantitative High-Resolution Two-Dimensional Profiling of SiC by Scanning Capacitance Microscopy
Raineri, V. ; Giannazzo, F. ; Calcagno, L. ; Musumeci, P. ; Roccaforte, F. ; La Via, F.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.655-658,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
8.

Conference Proceedings
Conference Proceedings
8. Comparison between Chemical and Electrical Profiles in Al+ or N+ Implanted and Annealed 6H-SiC
Nipoti, R. ; Carnera, A. ; Raineri, V.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.811-814,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
9.

Conference Proceedings
Conference Proceedings
9. Role of H2 in Low Temperature Post-Oxidation Anneal for Gate Oxide on 6H-SiC
Raineri, V. ; Lombardo, S. ; Musumeci, P. ; Maktari, A.M. ; Calcagno, L.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.639-642,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
10.

Conference Proceedings
Conference Proceedings
10. Electrical Characterization of Nickel Silicide Contacts on Silicon Carbide
Roccaforte, F. ; La Via, F. ; Raineri, V. ; Musumeci, P. ; Calcagno, L.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.893-896,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
11.

Conference Proceedings
Conference Proceedings
11. Effect of Annealing at High Hydrostatic Pressure of Silicon Implanted with Helium and Oxygen
Misiuk, A. ; Katcki, J. ; Ratajczak, J. ; Raineri, V. ; Bak-Misiuk, J. ; Gawlik, L. ; Bryja, L. ; Jun, J.
Pub. info.: Atomistic aspects of epitaxial growth.  pp.457-466,  2002.  Dordrecht.  Kluwer Academic Publishers
Title of ser.: NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.: 65
12.

Conference Proceedings
Conference Proceedings
12. Temperature Stability of Breakdown Voltage on SiC Power Schottky Diodes with Different Barrier Heights
Pierobon, R. ; Meneghesso, G. ; Zanoni, E. ; Roccaforte, F. ; Via, F. La ; Raineri, V.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.933-936,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
13.

Conference Proceedings
Conference Proceedings
13. Ion-Beam Induced Modifications of Titanium Schottky Barrier on 4H-SiC
Roccaforte, F. ; Giannazzo, F. ; Bongiorno, C. ; Libertino, S. ; Via, F. La ; Raineri, V.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.729-732,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
14.

Conference Proceedings
Conference Proceedings
14. Electrical Characterization of Nickel Silicide Contacts on Silicon Carbide
Roccaforte, F. ; La Via, F. ; Raineri, V. ; Musumeci, P. ; Calcagno, L.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.893-896,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
15.

Conference Proceedings
Conference Proceedings
15. Comparison between Different Schottky Diode Edge Termination Structures: Simulations and Experimental Results
La Via, F. ; Roccaforte, F. ; Di Franco, S. ; Raineri, V. ; Moscatelli, F. ; Scorzoni, A. ; Cardinali, G.C.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.827-830,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
16.

Conference Proceedings
Conference Proceedings
16. Low Power Dissipation SiC Schottky Rectifiers with a Dual-Metal Planar Structure
Roccaforte, F. ; La Via, F. ; La Magna, A. ; Di Franco, S. ; Raineri, V.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.819-822,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
17.

Conference Proceedings
Conference Proceedings
17. Study of TiW/Au Thin Films Metallization Stack for High Temperature and Harsh Environment Devices on 6H Silicon Carbide
Baeri, A. ; Raineri, V. ; Roccaforte, F. ; La Via, F. ; Zanetti, E.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.873-876,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
18.

Conference Proceedings
Conference Proceedings
18. Schottky-Ohmic Transition in Nickel Silicide/SiC-4H System: the Effect of Non Uniform Schottky Barrier
Via, F. La ; Roccaforte, F. ; Raineri, V. ; Mauceri, M. ; Ruggiero, A. ; Musumeci, P. ; Calcagno, L.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.861-864,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
19.

Conference Proceedings
Conference Proceedings
19. Effects of Thermal Treatments on the Structural and Electrical Properties of Ni/Ti Bilayers Schottky Contacts on 6H-SiC
Roccaforte, F. ; La Via, F. ; Baeri, A. ; Raineri, V. ; Calcagno, L. ; Mangano, F.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.865-868,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
20.

Conference Proceedings
Conference Proceedings
20. Electrical Characterization of Inhomogeneous Ni2/Si/SiC Schottky Contacts
Roccaforte, F. ; La Via, F. ; Raineri, V. ; Pierobon, R. ; Zanoni, E.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.869-872,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
21.

Conference Proceedings
Conference Proceedings
21. Titanium Silicidation and Secondary Defect Annihilation in Ion Beam Processed SiGe Layers
Larsen, K. Kyllesbech ; Via, F. La ; Lombardo, S. ; Raineri, V. ; Donaton, R. A. ; Campisano, S. U.
Pub. info.: Silicide thin films - fabrication, properties, and applications : Symposium held November 27-30, 1995, Boston, Massachusetts, USA.  pp.149-,  1996.  Pittsburgh.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 402
22.

Conference Proceedings
Conference Proceedings
22. Activation Study of Implanted N+ in 6H-SiC by Scanning Capacitance Microscopy
Raineri, V. ; Calcagno, L. ; Giannazzo, F. ; Goghero, D. ; Musumeci, F. ; Roccaforte, F. ; La Via, F.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.375-378,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
23.

Conference Proceedings
Conference Proceedings
23. Quantitative High-Resolution Two-Dimensional Profiling of SiC by Scanning Capacitance Microscopy
Raineri, V. ; Giannazzo, F. ; Calcagno, L. ; Musumeci, P. ; Roccaforte, F. ; La Via, F.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.655-658,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
24.

Conference Proceedings
Conference Proceedings
24. Comparison between Chemical and Electrical Profiles in Al+ or N+ Implanted and Annealed 6H-SiC
Nipoti, R. ; Carnera, A. ; Raineri, V.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.811-814,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
25.

Conference Proceedings
Conference Proceedings
25. Schottky-Ohmic Transition in Nickel Silicide/SiC System: Is it Really a Solved Problem?
Calcagno, L. ; Zanetti, E. ; La Via, F. ; Roccaforte, F. ; Raineri, V. ; Libertino, S. ; Giannazzo, F. ; Mauceri, M. ; Musumeci, P.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.721-724,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436