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15 results

Conference Proceedings

1. Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes

Raineri, V. ; Roccaforte, F. ; Libertino, S. ; Ruggiero, A. ; Massimino, V. ; Calcagno, L.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1167-1170, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. Quantitative High-Resolution Two-Dimensional Profiling of SiC by Scanning Capacitance Microscopy

Raineri, V. ; Giannazzo, F. ; Calcagno, L. ; Musumeci, P. ; Roccaforte, F. ; La Via, F.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.655-658, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

3. Electrical Characterization of Nickel Silicide Contacts on Silicon Carbide

Roccaforte, F. ; La Via, F. ; Raineri, V. ; Musumeci, P. ; Calcagno, L.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.893-896, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

4. Temperature Stability of Breakdown Voltage on SiC Power Schottky Diodes with Different Barrier Heights

Pierobon, R. ; Meneghesso, G. ; Zanoni, E. ; Roccaforte, F. ; Via, F. La ; Raineri, V.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.933-936, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

5. Ion-Beam Induced Modifications of Titanium Schottky Barrier on 4H-SiC

Roccaforte, F. ; Giannazzo, F. ; Bongiorno, C. ; Libertino, S. ; Via, F. La ; Raineri, V.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.729-732, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

6. Electrical Characterization of Nickel Silicide Contacts on Silicon Carbide

Roccaforte, F. ; La Via, F. ; Raineri, V. ; Musumeci, P. ; Calcagno, L.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.893-896, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

7. Comparison between Different Schottky Diode Edge Termination Structures: Simulations and Experimental Results

La Via, F. ; Roccaforte, F. ; Di Franco, S. ; Raineri, V. ; Moscatelli, F. ; Scorzoni, A. ; Cardinali, G.C.

Pub. info.:	Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden. pp.827-830, 2003. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	433-436

Conference Proceedings

8. Low Power Dissipation SiC Schottky Rectifiers with a Dual-Metal Planar Structure

Roccaforte, F. ; La Via, F. ; La Magna, A. ; Di Franco, S. ; Raineri, V.

Pub. info.:	Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden. pp.819-822, 2003. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	433-436

Conference Proceedings

9. Study of TiW/Au Thin Films Metallization Stack for High Temperature and Harsh Environment Devices on 6H Silicon Carbide

Baeri, A. ; Raineri, V. ; Roccaforte, F. ; La Via, F. ; Zanetti, E.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.873-876, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

10.

Conference Proceedings

10. Schottky-Ohmic Transition in Nickel Silicide/SiC-4H System: the Effect of Non Uniform Schottky Barrier

Via, F. La ; Roccaforte, F. ; Raineri, V. ; Mauceri, M. ; Ruggiero, A. ; Musumeci, P. ; Calcagno, L.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.861-864, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

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