Search records | 東京工業大学附属図書館文献データベース

You can search for articles included in proceedings of international conferences and technical papers which Tokyo Tech Library holds.
Tokyo Tech members can obtain tables of contents of 17,000 foreign journals by SwetScan. Tokyo Tech Library does not cover all of them.
List of Searchable Databases

Clear Form

Search for other sites by same keyword(s).

CiNii Books

NDL Search

WebcatPlus

amazon

カーリル

WorldCat

Filter

Title:

Author:

ISBN / ISSN / Paper No:

Source Title:

Publisher:

Publication Year:

～

Clear Form

Type:

Conference Proceedings

Technical Paper

Academic Journal

Select: Check all | Remove all

Sort order

10 | 50 | 100 / Per Page

11 results

Conference Proceedings

1. Quantitative High-Resolution Two-Dimensional Profiling of SiC by Scanning Capacitance Microscopy

Raineri, V. ; Giannazzo, F. ; Calcagno, L. ; Musumeci, P. ; Roccaforte, F. ; La Via, F.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.655-658, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

2. Electrical Characterization of Nickel Silicide Contacts on Silicon Carbide

Roccaforte, F. ; La Via, F. ; Raineri, V. ; Musumeci, P. ; Calcagno, L.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.893-896, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

3. Electrical Characterization of Nickel Silicide Contacts on Silicon Carbide

Roccaforte, F. ; La Via, F. ; Raineri, V. ; Musumeci, P. ; Calcagno, L.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.893-896, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

4. Comparison between Different Schottky Diode Edge Termination Structures: Simulations and Experimental Results

La Via, F. ; Roccaforte, F. ; Di Franco, S. ; Raineri, V. ; Moscatelli, F. ; Scorzoni, A. ; Cardinali, G.C.

Pub. info.:	Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden. pp.827-830, 2003. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	433-436

Conference Proceedings

5. Low Power Dissipation SiC Schottky Rectifiers with a Dual-Metal Planar Structure

Roccaforte, F. ; La Via, F. ; La Magna, A. ; Di Franco, S. ; Raineri, V.

Pub. info.:	Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden. pp.819-822, 2003. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	433-436

Conference Proceedings

6. Study of TiW/Au Thin Films Metallization Stack for High Temperature and Harsh Environment Devices on 6H Silicon Carbide

Baeri, A. ; Raineri, V. ; Roccaforte, F. ; La Via, F. ; Zanetti, E.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.873-876, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

Conference Proceedings

7. Effects of Thermal Treatments on the Structural and Electrical Properties of Ni/Ti Bilayers Schottky Contacts on 6H-SiC

Roccaforte, F. ; La Via, F. ; Baeri, A. ; Raineri, V. ; Calcagno, L. ; Mangano, F.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.865-868, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

Conference Proceedings

8. Electrical Characterization of Inhomogeneous Ni2/Si/SiC Schottky Contacts

Roccaforte, F. ; La Via, F. ; Raineri, V. ; Pierobon, R. ; Zanoni, E.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.869-872, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

Conference Proceedings

9. Activation Study of Implanted N+ in 6H-SiC by Scanning Capacitance Microscopy

Raineri, V. ; Calcagno, L. ; Giannazzo, F. ; Goghero, D. ; Musumeci, F. ; Roccaforte, F. ; La Via, F.

Pub. info.:	Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden. pp.375-378, 2003. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	433-436

10.

Conference Proceedings

10. Quantitative High-Resolution Two-Dimensional Profiling of SiC by Scanning Capacitance Microscopy

Raineri, V. ; Giannazzo, F. ; Calcagno, L. ; Musumeci, P. ; Roccaforte, F. ; La Via, F.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.655-658, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

11 results

Select: Check all | Remove all

Sort order

10 | 50 | 100 / Per Page

Filtering by: