1.

Conference Proceedings
Conference Proceedings
1. Quantitative High-Resolution Two-Dimensional Profiling of SiC by Scanning Capacitance Microscopy
Raineri, V. ; Giannazzo, F. ; Calcagno, L. ; Musumeci, P. ; Roccaforte, F. ; La Via, F.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.655-658,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
2.

Conference Proceedings
Conference Proceedings
2. Ion-Beam Induced Modifications of Titanium Schottky Barrier on 4H-SiC
Roccaforte, F. ; Giannazzo, F. ; Bongiorno, C. ; Libertino, S. ; Via, F. La ; Raineri, V.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.729-732,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
3.

Conference Proceedings
Conference Proceedings
3. Activation Study of Implanted N+ in 6H-SiC by Scanning Capacitance Microscopy
Raineri, V. ; Calcagno, L. ; Giannazzo, F. ; Goghero, D. ; Musumeci, F. ; Roccaforte, F. ; La Via, F.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.375-378,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
4.

Conference Proceedings
Conference Proceedings
4. Quantitative High-Resolution Two-Dimensional Profiling of SiC by Scanning Capacitance Microscopy
Raineri, V. ; Giannazzo, F. ; Calcagno, L. ; Musumeci, P. ; Roccaforte, F. ; La Via, F.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.655-658,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
5.

Conference Proceedings
Conference Proceedings
5. Schottky-Ohmic Transition in Nickel Silicide/SiC System: Is it Really a Solved Problem?
Calcagno, L. ; Zanetti, E. ; La Via, F. ; Roccaforte, F. ; Raineri, V. ; Libertino, S. ; Giannazzo, F. ; Mauceri, M. ; Musumeci, P.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.721-724,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436