1.

Conference Proceedings
Conference Proceedings
1. Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes
Raineri, V. ; Roccaforte, F. ; Libertino, S. ; Ruggiero, A. ; Massimino, V. ; Calcagno, L.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1167-1170,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Quantitative High-Resolution Two-Dimensional Profiling of SiC by Scanning Capacitance Microscopy
Raineri, V. ; Giannazzo, F. ; Calcagno, L. ; Musumeci, P. ; Roccaforte, F. ; La Via, F.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.655-658,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
3.

Conference Proceedings
Conference Proceedings
3. Role of H2 in Low Temperature Post-Oxidation Anneal for Gate Oxide on 6H-SiC
Raineri, V. ; Lombardo, S. ; Musumeci, P. ; Maktari, A.M. ; Calcagno, L.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.639-642,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
4.

Conference Proceedings
Conference Proceedings
4. Electrical Characterization of Nickel Silicide Contacts on Silicon Carbide
Roccaforte, F. ; La Via, F. ; Raineri, V. ; Musumeci, P. ; Calcagno, L.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.893-896,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
5.

Conference Proceedings
Conference Proceedings
5. Electrical Characterization of Nickel Silicide Contacts on Silicon Carbide
Roccaforte, F. ; La Via, F. ; Raineri, V. ; Musumeci, P. ; Calcagno, L.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.893-896,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
6.

Conference Proceedings
Conference Proceedings
6. Schottky-Ohmic Transition in Nickel Silicide/SiC-4H System: the Effect of Non Uniform Schottky Barrier
Via, F. La ; Roccaforte, F. ; Raineri, V. ; Mauceri, M. ; Ruggiero, A. ; Musumeci, P. ; Calcagno, L.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.861-864,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
7.

Conference Proceedings
Conference Proceedings
7. Effects of Thermal Treatments on the Structural and Electrical Properties of Ni/Ti Bilayers Schottky Contacts on 6H-SiC
Roccaforte, F. ; La Via, F. ; Baeri, A. ; Raineri, V. ; Calcagno, L. ; Mangano, F.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.865-868,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
8.

Conference Proceedings
Conference Proceedings
8. Activation Study of Implanted N+ in 6H-SiC by Scanning Capacitance Microscopy
Raineri, V. ; Calcagno, L. ; Giannazzo, F. ; Goghero, D. ; Musumeci, F. ; Roccaforte, F. ; La Via, F.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.375-378,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
9.

Conference Proceedings
Conference Proceedings
9. Quantitative High-Resolution Two-Dimensional Profiling of SiC by Scanning Capacitance Microscopy
Raineri, V. ; Giannazzo, F. ; Calcagno, L. ; Musumeci, P. ; Roccaforte, F. ; La Via, F.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.655-658,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
10.

Conference Proceedings
Conference Proceedings
10. Schottky-Ohmic Transition in Nickel Silicide/SiC System: Is it Really a Solved Problem?
Calcagno, L. ; Zanetti, E. ; La Via, F. ; Roccaforte, F. ; Raineri, V. ; Libertino, S. ; Giannazzo, F. ; Mauceri, M. ; Musumeci, P.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.721-724,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436