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11 results

Conference Proceedings

1. Carrier Dynamics in Hetero- and Homo-Epitaxially Sublimation Grown 3C-SiC Layers

G. Manolis ; M. Beshkova ; M. Syväjärvi ; R. Yakimova ; K. Jarašiūnas

Pub. info.:	Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd. pp.161-164, 2011. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	679-680

Conference Proceedings

2. P- and n-Type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates

P. Hens ; M. Syväjärvi ; F. Oehlschläger ; P.J. Wellmann ; R. Yakimova

Pub. info.:	Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain. pp.85-88, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	615-617

Conference Proceedings

3. Growth and Light Properties of Fluorescent SiC for White LEDs

M. Syväjärvi ; R. Yakimova ; M. Iwaya ; T. Takeuchi ; I. Akasaki

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.87-92, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

Conference Proceedings

4. Structural Properties of 3C-SiC Grown by Sublimation Epitaxy

M. Beshkova ; M. Syväjärvi ; R. Vasiliauskas ; J. Birch ; R. Yakimova

Pub. info.:	Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain. pp.181-184, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	615-617

Conference Proceedings

5. Progress in 3C-SiC Growth and Novel Applications

R. Yakimova ; R. Vasiliauskas ; J. Eriksson ; M. Syväjärvi

Pub. info.:	HeteroSiC & WASMPE 2011 : selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France. pp.3-10, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	711

Conference Proceedings

6. Characterization of Electronic Properties of Different SiC Polytypes by All-Optical Means

K. Neimontas ; K. Jarašiūnas ; R. Yakimova ; M. Syväjärvi ; G. Ferro

Pub. info.:	Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007. pp.509-512, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	600-603

Conference Proceedings

7. Macrodefects in Cubic Silicon Carbide Crystals

V. Jokubavicius ; J. Palisaitis ; R. Vasiliauskas ; R. Yakimova ; M. Syväjärvi

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.375-378, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

Conference Proceedings

8. The Influence of the Temperature Gradient on the Defect Structure of 3C-SiC Grown Heteroepitaxially on 6H-SiC by Sublimation Epitaxy

M. Marinova ; A. Mantzari ; M. Beshkova ; M. Syväjärvi ; R. Yakimova

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.367-370, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

Conference Proceedings

9. Analysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC Substrates

R. Yakimova ; C. Virojanadara ; D. Gogova ; M. Syväjärvi ; D. Siche

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.565-568, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

10.

Conference Proceedings

10. Two-Dimensional Nucleation of Cubic and 6H Silicon Carbide

R. Vasiliauskas ; M. Syväjärvi ; M. Beshkova ; R. Yakimova

Pub. info.:	Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain. pp.189-192, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	615-617

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