1.

Conference Proceedings
Conference Proceedings
1. Relaxation-Induced Excess Leakage Current in Recessed Si₁₋xGex Source/Drain Junctions
M. B. Gonzalez ; M. Chowdhury ; N. Bhouri ; P. Verheyen ; F. Leys ; O. Richard ; R. Loo ; C. Claeys ; B. Simoen ; V. Machkaoutsan ; P. Tomasini ; S. Thomas ; J. Lu ; J. Weijtmans ; R. Wise
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment.  pp.389-396,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(1)
2.

Conference Proceedings
Conference Proceedings
2. Probing Nanoscale Local Lattice Strains in Advanced Si CMOS Devices by CBED: A Tutorial with Recent Results
M. Kim ; J. Huang ; P. Chidambaram ; R. Irwin ; P. Jones ; J. Weijtmans ; E. Koontz ; Y. Wang ; S. Tang ; R. Wise
Pub. info.: Silicon materials science and technology X.  pp.541-548,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 2(2)