1.

Conference Proceedings
Conference Proceedings
1. 1950° C Annealing of Al+ Implanted 4H-SiC: Sheet Resistance Dependence on the Annealing Time
R. Nipoti ; A. Parisini ; S. Vantaggio ; G. Alfieri ; A. Carnera
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.523-526,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
2.

Conference Proceedings
Conference Proceedings
2. SiC Device Manufacturing: How Processing Impacts the Material and Device Properties
U. Grossner ; G. Alfieri ; R. Nipoti
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.381-386,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
3.

Conference Proceedings
Conference Proceedings
3. Point Defects Investigation of High Energy Proton Irradiated SiC p+-i-n Diodes
G. Alfieri ; A. Mihaila ; R. Nipoti ; M. Puzzanghera ; G. Sozzi ; P. Godignon ; J. Millán
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.246-249,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
4.

Conference Proceedings
Conference Proceedings
4. Ni-Al-Ti Ohmic Contacts on Al Implanted 4H-SiC
P. Fedeli ; M. Puzzanghera ; F. Moscatelli ; R.A. Minamisawa ; G. Alfieri ; U. Grossner ; R. Nipoti
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.391-394,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897