1.

Conference Proceedings
Conference Proceedings
1. Alternative Highly Homogenous Drift Layer Doping for 650 V SiC Devices
R. Rupp ; W. Schustereder ; T. Höechbauer ; R. Kern ; M. Rüb
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.531-534,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
2.

Conference Proceedings
Conference Proceedings
2. Performance of a 650V SiC Diode with Reduced Chip Thickness
R. Rupp ; R. Gerlach ; U. Kirchner ; A. Schlögl ; R. Kern
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.921-924,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
3.

Conference Proceedings
Conference Proceedings
3. Primary Solar Cell Standards - Comparison of Extraterrestrial and Synthetic Calibration
C. Baur ; G. Siefer ; R. Kern ; S. Winter
Pub. info.: Proceedings of the 9th European Space Power Conference : 6-10 June 2011, Saint Raphael, France.  2011.  Noordwijk.  ESA Communications
Title of ser.: ESA SP
Ser. no.: 690
4.

Conference Proceedings
Conference Proceedings
4. SiC Epitaxial Growth in a 7x100mm/3x150mm Horizontal Hot-Wall Batch Reactor
T. Höchbauer ; M. Leitner ; R. Kern ; M. Künle
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.165-168,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
5.

Conference Proceedings
Conference Proceedings
5. Investigations on Surge Current Capability of SiC Schottky Diodes by Implementation of New Pad Metallizations
J. Hilsenbeck ; M. Treu ; R. Rupp ; K. Rüschenschmidt ; R. Kern
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.673-676,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648