1.

Conference Proceedings
Conference Proceedings
1. On the origin of yellow donor-acceptor pair emission iu GaN
Godlewski,M. ; Ivanov,V.Yu. ; Kaminska,A. ; Zuo,H.Y. ; Goldys,E.M. ; Tansley,T.L. ; Barski,A. ; Rossner,U. ; Rouvicre,J.L. ; Arlery,M. ; Grzegory,I. ; Suski,T. ; Porowski,S. ; Bergman,J.P.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.1149-1154,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
2.

Conference Proceedings
Conference Proceedings
2. Exciton Dynamics in Homoepitaxial GaN
Monemar,B. ; Bergman,J.P. ; Ivanov,I.G. ; Baranowski,J.M. ; Pakula,K. ; Grzegory,I. ; Porowski,S.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1275-1278,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
3.

Conference Proceedings
Conference Proceedings
3. Photoluminescenee dynamics in the near bandgap region of homoepitaxial GaN layers
Korona,K.P. ; Bergman,J.P. ; Monemar,B. ; Baranowski,J.M. ; Pakula,K. ; Grzegory,I. ; Porowski,S.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.1125-1130,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263