1.

Conference Proceedings
Conference Proceedings
1. Coimplantation Effects on the Electrical Properties of Boron and Aluminum Acceptors in 4H-SiC
Itoh,H. ; Troffer,T. ; Pensl,G.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.685-688,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
2.

Conference Proceedings
Conference Proceedings
2. Incorporation of the D-Center in SiC Controlled either by Coimplantation of Si/B and C/B or by Site-Competiticn Epitaxy
Frank,T. ; Troffer,T. ; Pensl,G. ; Nordell,N. ; Karlsson,S. ; Schoner,A.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.681-684,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
3.

Conference Proceedings
Conference Proceedings
3. Electrical Characterization of the Gallium Acceptor in 4H- and 6H-SiC
Troffer,T. ; Pensl,G. ; Schoner,A. ; Henry,A. ; Hallin,C. ; Kordina,O. ; Janzen,E.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.557-560,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
4.

Conference Proceedings
Conference Proceedings
4. Optical Properties of Silicon Carbide:Some Recent Developments
Devaty,R.P. ; Choyke,W.J. ; Sridhara,S.G. ; Clemen,L.L. ; Nizhner,D.G. ; Larkin,D.J. ; Troffer,T. ; Pensl,G. ; Kimoto,T. ; Kong,H.S.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.455-460,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
5.

Conference Proceedings
Conference Proceedings
5. Boron Four Particle Acceptor Bound Exciton Complex in 4H SiC
Sridhara,S.G. ; Nizhner,D.G. ; Devaty,R.P. ; Choyke,W.J. ; Troffer,T. ; Pensl,G. ; Larkin,D.J. ; Kong,H.S.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.461-464,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268