1.

Conference Proceedings
Conference Proceedings
1. SiC/SiO2 Interface States: Properties and Models
Afanas'ev, V. V. ; Ciobanu, F. ; Dimitrijev, S. ; Pensl, G. ; Stesmans, A.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.563-568,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
2.

Conference Proceedings
Conference Proceedings
2. Physics of SiC Processing
Pensl, G. ; Afanas'ev, V. V. ; Bassler, M. ; Frank, T. ; Laube, M. ; Weidner, M.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.831-836,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
3.

Conference Proceedings
Conference Proceedings
3. Electrically Active Traps at the 4H-SiC/SiO2 Interface Responsible for the Limitation of the Channel Mobility
Bassler, M. ; Afanas'ev, V. V. ; Pensl, G. ; Schulz, M.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1065-1068,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)