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Conference Proceedings

1. Selective Etching of Wide-Bandgap Nitrides

Shul, R. J. ; Willison, C. G. ; Bridges, M. M. ; Han, J. ; Lee, J. W. ; Pearton, S. J. ; Abernathy, C. R. ; MacKenzie, J. D. ; Donovan, S. M.

Pub. info.:	Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.. pp.155-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	483

Conference Proceedings

2. Comparison of Novel Chlorine, Bromine, and Iodine Plasma Chemistries for Anisotropic Trench Etching in GaN, InN, and AIN

Cho, Hyun ; Maeda, T. ; MacKenzie, J. D. ; Donovan, S. M. ; Abernathy, C. R. ; Pearton, S. J. ; Shul, R. J. ; Han, J. ; Ren, F.

Pub. info.:	Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.. pp.501-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	512

Conference Proceedings

3. Photoelectrochemical Etching of InxGa1-xN

Cho, H. ; Donovan, S. M. ; Abernathy, C. R. ; Pearton, S. J. ; Ren, F. ; Han, J. ; Shul, R. J.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G6.40.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

4. Cl2-Based Dry Etching of the AlGalnN System in Inductively-Coupled Plasmas

Cho, Hyun ; Vartuli, C. B. ; Abernathy, C. R. ; Donovan, S. M. ; Pearton, S. J. ; Shul, R. J. ; Han, J.

Pub. info.:	Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.. pp.327-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	483