1.

Conference Proceedings
Conference Proceedings
1. Physical Characterization of HfO2 Deposited on Ge Substrates by MOCVD
Elshocht, S.Van ; Brijs, B. ; Caymax, M. ; Conard, T. ; Gendt, S.De ; Kubicek, S. ; Meuris, M. ; Onsia, B. ; Richard, O. ; Teerlinck, I. ; Steenbergen, J.Van ; Zhao, C. ; Heyns, M.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.287-292,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809
2.

Conference Proceedings
Conference Proceedings
2. High-k Materials for Advanced Gate Stack Dielectrics: A Comparison of ALCVD and MOCVD as Deposition Technologies
Caymax, Matty ; Bender, H. ; Brijs, B. ; Conard, T. ; Gendt, S. De ; Delabie, A. ; Heyns, M. ; Onsia, B. ; Ragnarsson, L. ; Richard, O. ; Vandervorst, W. ; Elshocht, S. Van ; Zhao, C. ; Maes, J. W. ; Date, L. ; Pique, D. ; Young, E. ; Tsai, W. ; Shimamoto, Y.
Pub. info.: CMOS front-end materials and process technology : symposium held April 22-24, 2003, San Francisco, California, U.S.A..  pp.47-58,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 765
3.

Conference Proceedings
Conference Proceedings
3. Physical Characterization of HfO2 Deposited on Ge Substrates by MOCVD
Elshocht, S.Van ; Brijs, B. ; Caymax, M. ; Conard, T. ; Gendt, S.De ; Kubicek, S. ; Meuris, M. ; Onsia, B. ; Richard, O. ; Teerlinck, I. ; Steenbergen, J.Van ; Zhao, C. ; Heyns, M.
Pub. info.: Integration of advanced micro- and nanoelectronic devices - critical issues and solutions : symposium held April 13-16, 2004, San Francisco, California, U.S.A..  pp.163-168,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 811