1.

Conference Proceedings
Conference Proceedings
1. Ion-Implantation Induced Deep Levels in SiC Studied by Isothermal Capacitance Transient Spectroscopy (ICTS)
Ono, R. ; Fujimaki, M. ; Senzaki, J. ; Tanimoto, S. ; Shinohe, T. ; Okushi, H. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.847-850,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
2.

Conference Proceedings
Conference Proceedings
2. SiC Device Limitation Breakthrough with Novel Floating Junction Structure on 4H-SiC
Adachi, K. ; Omura, I. ; Ono, R. ; Nishio, J. ; Shinohe, T. ; Ohashi, H. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.887-890,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
3.

Conference Proceedings
Conference Proceedings
3. Breakdown Electric Field in 4H-SiC Epitaxial Layer Grown on Various Net-Doping Substrates
Ono, R. ; Fujimaki, M. ; Hon-Joo, N. ; Tanimoto, S. ; Shinohe, T. ; Yatsuo, T. ; Okushi, H. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.435-438,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
4.

Conference Proceedings
Conference Proceedings
4. Mapping on Bulk and Epitaxy Layer 4H-SiC
Ono, R. ; Yatsuo, T. ; Okushi, H. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.431-434,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
5.

Conference Proceedings
Conference Proceedings
5. Ion-Implantation Induced Deep Levels in SiC Studied by Isothermal Capacitance Transient Spectroscopy (ICTS)
Ono, R. ; Fujimaki, M. ; Senzaki, J. ; Tanimoto, S. ; Shinohe, T. ; Okushi, H. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.847-850,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
6.

Conference Proceedings
Conference Proceedings
6. Distribution Profile of Deep Levels in SiC Observed by Isothermal Capacitance Transient Spectroscopy
Fujimaki, M. ; Ono, R. ; Kushibe, M. ; Masahara, K. ; Kojima, K. ; Shinohe, T. ; Okushi, H. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.851-854,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393