Search records | 東京工業大学附属図書館文献データベース

You can search for articles included in proceedings of international conferences and technical papers which Tokyo Tech Library holds.
Tokyo Tech members can obtain tables of contents of 17,000 foreign journals by SwetScan. Tokyo Tech Library does not cover all of them.
List of Searchable Databases

Clear Form

Search for other sites by same keyword(s).

CiNii Books

NDL Search

WebcatPlus

amazon

カーリル

WorldCat

Filter

Title:

Author:

ISBN / ISSN / Paper No:

Source Title:

Publisher:

Publication Year:

～

Clear Form

Type:

Conference Proceedings

Technical Paper

Academic Journal

Select: Check all | Remove all

Sort order

10 | 50 | 100 / Per Page

11 results

Conference Proceedings

1. Analytical Modelling of I-V Characteristics for 4H-SiC Enhancement Mode VJFET

Bhatnagar, P. ; Horsfall, A.B. ; Wright, N.G. ; Johnson, C.M. ; Vassilevski, K.V. ; O'Neill, A.G.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1195-1198, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. 4H-SiC Schottky Diodes with High On/Off Current Ratio

Vassilevski, K.V. ; Horsfall, A.B. ; Johnson, C.M. ; Wright, N.G. ; O'Neill, A.G.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1145-1148, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

3. Optimisation of Implanted Guard-Ring Terminations in 4H-SiC Schottky Diodes

Horsfall, A.B. ; Vassilevski, K.V. ; Johnson, C.M. ; Wright, N.G. ; O'Neill, A.G. ; Gwilliam, R.M.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1149-1152, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

4. Enhanced Dopant Diffusion Effects in 4H Silicon Carbide

Phelps, G.J. ; Wright, N.G. ; Chester, E.G. ; Johnson, C.M. ; O'Neill, A.G. ; Ortolland, S. ; Horsfall, A.B. ; Vassilevski, K. ; Gwilliam, R.M.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.855-858, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

5. Physical Characterization of Residual Implant Damage in 4H-SiC Double Implanted Bipolar Technology

Wright, N.G. ; Johnson, C.M. ; O'Neill, A.G. ; Horsfall, A. ; Phelps, G.J. ; Adachi, K. ; Knights, A.P. ; Ortolland, S. ; Coleman, P.G. ; Burrows, C.P.

Pub. info.:	Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.. 2001. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	640

Conference Proceedings

6. Optimisation of a 4H-SiC Enhancement Mode Power JFET

Horsfall, A.B. ; Johnson, C.M. ; Wright, N.G. ; O'Neill, A.G.

Pub. info.:	Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden. pp.777-780, 2003. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	433-436

Conference Proceedings

7. Characterisation of the High Temperature Performance of 4H-SiC Schottky Barrier Diodes

Blasciuc-Dimitriu, C. ; Horsfall, A.B. ; Vassilevski, K.V. ; Johnson, C.M. ; Wright, N.G. ; O'Neill, A.G.

Pub. info.:	Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden. pp.823-826, 2003. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	433-436

Conference Proceedings

8. First Principles Derivation of Carrier Transport across Metal - SiC Barriers

Dimitriu, C.B. ; Horsfall, A.B. ; Wright, N.G. ; Johnson, C.M. ; Vassilevski, K.V. ; O'Neill, A.G.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.969-972, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

Conference Proceedings

9. Enhanced Dopant Diffusion Effects in 4H Silicon Carbide

Phelps, G.J. ; Wright, N.G. ; Chester, E.G. ; Johnson, C.M. ; O'Neill, A.G. ; Ortolland, S. ; Horsfall, A.B. ; Vassilevski, K. ; Gwilliam, R.M.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.855-858, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

10.

Conference Proceedings

10. 4H-SiC Schottky Diodes with High On/Off Current Ratio

Vassilevski, K.V. ; Horsfall, A.B. ; Johnson, C.M. ; Wright, N.G. ; O'Neill, A.G.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1145-1148, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

11 results

Select: Check all | Remove all

Sort order

10 | 50 | 100 / Per Page

Filtering by: