1.

Conference Proceedings
Conference Proceedings
1. Epitaxial Growth of 4H-SiC (0001) by Sublimation Method Using Horizontal Furnace
Park, C.K. ; An, J.H. ; Lee, W.J. ; Shin, B.C. ; Nishino, S.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.267-270,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. HETEROEPITAXIAL GROWTH OF ANTIPHASE-BOUNDARY FREE CUBIC SiC (100) SINGLE CRYSTALS ON Si (100)
Shibahara, K. ; Nishino, S. ; Matsunami, H.
Pub. info.: Novel refractory semiconductors : symposium held April 21-23, 1987, Anaheim, California, U.S.A..  pp.183-188,  1987.  Pittsburgh, Penn..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 97
3.

Conference Proceedings
Conference Proceedings
3. Homoepitaxial Growth on 4H-SiC (0338) Face by Sublimation Close Space Technique
Yoneda, S. ; Furusho, T. ; Takagi, H. ; Ohta, S. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.129-132,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
4.

Conference Proceedings
Conference Proceedings
4. Fabrication of Compact Ion Implanter for Silicon Carbide Devices
Mitani, S. ; Yamaguchi, S. ; Furukawa, S. ; Nakata, T. ; Horino, Y. ; Ono, R. ; Hosokawa, Y. ; Miyamoto, M. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.605-608,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
5.

Conference Proceedings
Conference Proceedings
5. Enlargement of SiC Single Crystal: Enhancement of Lateral Growth using Tapered Graphite Lid
Bahng, W. ; Kitou, Y. ; Nishizawa, S. ; Yamaguchi, H. ; Khan, M. N. ; Oyanagi, N. ; Arai, K. ; Nishino, S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.103-106,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
6.

Conference Proceedings
Conference Proceedings
6. PE-CVD of F-Doped SiO2 Thin Films Using Tetraisocyanatesilane and Tetrafluorosilane
Shirafuji, T. ; Sawada, M. ; Nakagami, Y. ; Hayashi, Y. ; Nishino, S.
Pub. info.: Low-dielectric constant materials II : symposium held December 2-3, 1996, Boston, Massachusetts, U.S.A..  pp.137-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 443
7.

Conference Proceedings
Conference Proceedings
7. Epitaxial Growth of High-Quality SiC by Sublimation Close-Space Technique
Nishino, S. ; Yoshida, T. ; Nishio, Y.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.307-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
8.

Conference Proceedings
Conference Proceedings
8. PECVD of Fluorocarbon/Silicon Oxide Composite Thin Films From TFE and HMDSO
Shirafuji, T. ; Hayashi, Y. ; Nishino, S.
Pub. info.: Plasma deposition and treatment of polymers : symposium held November 30-December 2, 1998, Boston, Massachusetts, U.S.A..  pp.173-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 544
9.

Conference Proceedings
Conference Proceedings
9. Properties of 4H-SiC by sublimation close space technique
Nishino, S. ; Matsumoto, K. ; Chen, Y. ; Nishio, Y.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.179-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572
10.

Conference Proceedings
Conference Proceedings
10. Properties of heteroepitaxial 3C-SiC layer on Si using Si2(CH3)6 by CVD
Chen, Y. ; Masuda, Y. ; Nishio, Y. ; Matsumoto, K. ; Nishino, S.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.191-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572
11.

Conference Proceedings
Conference Proceedings
11. Channel Epitaxy of 3C-SiC on Si Substrates by CVD
Nishino, S. ; Okui, Y. ; Jacob, C. ; Ohshima, S.
Pub. info.: Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A..  pp.15-22,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 742
12.

Conference Proceedings
Conference Proceedings
12. Characterization of 2in SiC As-Grown Bulk by SWBXT at SPring-8
Sasaki, M. ; Hirai, A. ; Miyanagi, T. ; Furusho, T. ; Nishiguchi, T. ; Shiomi, H. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.407-410,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
13.

Conference Proceedings
Conference Proceedings
13. Stress Distribution in 2in SiC Wafer Measured by Photoelastic Method
Sasaki, M. ; Miyanagi, Y. ; Nakayama, K. ; Shiomi, H. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.403-406,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
14.

Conference Proceedings
Conference Proceedings
14. Observation of 2in SiC Wafer by SWBXT at SPring-8
Sasaki, M. ; Hirai, A. ; Miyanagi, T. ; Furusho, T. ; Nishiguchi, T. ; Shiomi, H. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.411-414,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
15.

Conference Proceedings
Conference Proceedings
15. Donor Densities and Donor Energy Levels in 3C-SiC Determined by a New Method Based on Hall-Effect Measurements
Matsuura, H. ; Masuda, Y. ; Chen, Y. ; Nishino, S.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.495-498,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
16.

Conference Proceedings
Conference Proceedings
16. Characterization of 2 Inch SiC Wafers Made by the Sublimation Method
Sasaki, M. ; Shiomi, H. ; Nishino, S.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.267-270,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
17.

Conference Proceedings
Conference Proceedings
17. Sublimation Growth of 6H-SiC Boule on Various a-Plane Substrates
Nishino, S. ; Nishiguchi, T. ; Masuda, Y. ; Sasaki, M. ; Ohshima, S.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640
18.

Conference Proceedings
Conference Proceedings
18. Electrical Properties of 3C-SiC Grown on Si by CVD Method using Si2(CH3)6
Masuda, Y. ; Chen, Y. ; Matsuura, H. ; Harima, H. ; Nishino, S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.711-714,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
19.

Conference Proceedings
Conference Proceedings
19. Epitaxial Growth of 2 Inch 3C-SiC on Si Substrates by Atmospheric Hot Wall CVD
Zhu, Jiliang ; Chen, Yi ; Mukai, Yusuke ; Shoji, Akira ; Nishiguchi, Taro ; Ohshima, Satoru ; Nishino, S.
Pub. info.: Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A..  pp.71-76,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 815
20.

Conference Proceedings
Conference Proceedings
20. Epitaxial Growth of 3C-SiC on T-Shape Columnar Si Substrates
Nishino, S. ; Shoji, A. ; Nishiguchi, T. ; Ohshima, S.
Pub. info.: Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A..  pp.65-70,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 815
21.

Conference Proceedings
Conference Proceedings
21. Crystal Growth of 15R-SiC Boules by Sublimation Method
Nishiguchi, T. ; Okada, S. ; Sasaki, M. ; Harima, H. ; Nishino, S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.115-118,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
22.

Conference Proceedings
Conference Proceedings
22. Single Crystal Growth of 6H-SiC on Saw-Damaged Substrate by Sublimation Method
Okada, S. ; Nishiguchi, T. ; Shimizu, T. ; Sasaki, M. ; Oshima, S. ; Nishino, S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.51-54,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
23.

Conference Proceedings
Conference Proceedings
23. An In Situ Post Growth Annealing Process for the Improvement of 4H-SiC/SiO2 MOS Interface Prepared by CVD Using TEOS, and its Characteristic Study
Ramanujam, K. ; Furuichi, H. ; Taguchi, K. ; Ynkumoto, S. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.681-684,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
24.

Conference Proceedings
Conference Proceedings
24. Pressure Effect in Sublimation Growth of Bulk SiC
Kitou, Y. ; Bahng, W. ; Nishizawa, S. ; Nishino, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.83-86,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
25.

Conference Proceedings
Conference Proceedings
25. Mechanism of Various Defects Formation in Epitaxial Layer Prepared by Sublimation Epitaxy
Furusho, T. ; Matsumoto, K. ; Harima, H. ; Nishino, S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.217-220,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
26.

Conference Proceedings
Conference Proceedings
26. Morphological Stability of 6H-SiC Epitaxial Layer on Hemispherical Substrates Prepared by Chemical Vapor Deposition
Nishino, S. ; Nishio, Y. ; Masuda, Y. ; Chen, Y. ; Jacob, C.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.197-200,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
27.

Conference Proceedings
Conference Proceedings
27. Improvement of 3C-SiC Surface Morphology on Si(100) by Adding HCI Using Atmospheric CVD
Chen, Y. ; Masuda, Y. ; Jacob, C. ; Shirafuji, T. ; Nishino, S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.257-260,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
28.

Conference Proceedings
Conference Proceedings
28. Selective Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates Using Hexachlorodisilane and Propane
Jacob, C. ; Hong, M. -H. ; Chung, J. ; Pirouz, P. ; Nishino, S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.249-252,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
29.

Conference Proceedings
Conference Proceedings
29. Polytype and Defect Control of Two Inch Diameter Bulk SiC
Sasaki, M. ; Shiomi, H. ; Harima, H. ; Nishino, S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.485-488,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
30.

Conference Proceedings
Conference Proceedings
30. IN SITU TREATMENT TECHNOLOGIES
Ward, C.H. ; Hughes, J.B. ; Pope, G.A. ; Delshad, M. ; Dwaranath, V. ; Spain, J. ; Nishino, S. ; Fruchter, J.S. ; Vermeul, V.R. ; Williams, M.D. ; Szecsody, J.E.
Pub. info.: Innovative approaches to the on-site assessment and remediation of contaminated sites.  pp.183-216,  2001.  Dordrecht.  Kluwer Academic Publishers
Title of ser.: NATO science series. Series 4, Earth and environmental sciences
Ser. no.: 15
31.

Conference Proceedings
Conference Proceedings
31. Microfabrication of Si Column Covered with SiC Film for Electron Emitter
Nakata, T. ; Ohshiro, Y. ; Shoji, A. ; Okui, Y. ; Ohshima, S. ; Hayashi, Y. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.237-240,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
32.

Conference Proceedings
Conference Proceedings
32. Suppression Mechanism of Double Positioning Growth in 3C-SiC(111) Crystal by Using an Off-Axis Si(110) Substrate
Nakamura, M. ; Isshiki, T. ; Nishiguchi, T. ; Nishio, K. ; Ohshima, S. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.181-184,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
33.

Conference Proceedings
Conference Proceedings
33. Microstructures in the Pendeo Epitaxial Layer of 3C-SiC on Si Substrate
Shoji, A. ; Nakamura, M. ; Mitikami, K. ; Isshiki, T. ; Ohshima, S. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.221-224,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
34.

Conference Proceedings
Conference Proceedings
34. Influence of Substrate Roughness on the Formation of Defects in 3C-SiC Grown on Si(110) Substrate by Hetero-Epitaxial CVD Method
Isshiki, T. ; Nakamura, M. ; Nishiguchi, T. ; Nishio, K. ; Ohshima, S. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.185-188,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
35.

Conference Proceedings
Conference Proceedings
35. Lateral Epitaxial Overgrowth of 3C-SiC on Si Substrates by CVD Method
Sugishita, S. ; Shoji, A. ; Mukai, Y. ; Nishiguchi, T. ; Michikami, K. ; Issiki, T. ; Ohshima, S. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.177-180,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
36.

Conference Proceedings
Conference Proceedings
36. Suppression of the Twin Formation in CVD Growth of (111) 3C-SiC on (110) Si Substrate
Nishiguchi, T. ; Nakamura, M. ; Nishio, K. ; Isshiki, T. ; Ohshima, S. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.193-196,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
37.

Conference Proceedings
Conference Proceedings
37. Preparation of Porous 4H-SiC by Surface Anodization
Chen, Y. ; Shoji, S. ; Sugishita, S. ; Ohshima, S. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.257-260,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
38.

Conference Proceedings
Conference Proceedings
38. Effect of Tantalum in Sublimation Growth of Aluminum Nitride
Furusho, T. ; Ohshima, S. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.975-978,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
39.

Conference Proceedings
Conference Proceedings
39. The Effect of Nitrogen on Crystal Growth of SiC on (11-20) Substrates
Nishiguchi, T. ; Masuda, Y. ; Ohshima, S. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.115-118,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
40.

Conference Proceedings
Conference Proceedings
40. The Development of 2in 6H-SiC Wafer with High Thermal-Conductivity
Miyanagi, Y. ; Nakayama, K. ; Shiomi, H. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.51-54,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
41.

Conference Proceedings
Conference Proceedings
41. The Development of 4H-SiC {03-38} Wafers
Nakayama, K. ; Miyanagi, Y. ; Shiomi, H. ; Nishino, S. ; Kimoto, T. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.123-126,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
42.

Conference Proceedings
Conference Proceedings
42. Observation of Planar Defects in 2-inch SiC Wafer
Tanaka, H. ; Nishiguchi, T. ; Sasaki, M. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.79-82,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
43.

Conference Proceedings
Conference Proceedings
43. Temperature Dependence of Sublimation Growth of 6H-SiC on (11-20) Substrates
Nishiguchi, T. ; Masuda, Y. ; Ohshima, S. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.119-122,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
44.

Conference Proceedings
Conference Proceedings
44. The Effect of Epitaxial Growth on Warp of SiC Wafers
Nakayama, K. ; Miyanagi, Y. ; Maruyama, K. ; Okamoto, Y. ; Shiomi, H. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.235-238,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
45.

Conference Proceedings
Conference Proceedings
45. Hot-Wall CVD Growth of 4H-SiC Using Si2Cl6+C3H8+H2 System
Miyanagi, T. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.199-202,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
46.

Conference Proceedings
Conference Proceedings
46. Crystal Growth of Aluminum Nitride by Sublimation Close Space Technique
Furusho, T. ; Ohshima, S. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1449-1452,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
47.

Conference Proceedings
Conference Proceedings
47. Selective Epitaxial Growth of Pyramidal 3C-SiC on Patterned Si Substrate
Okui, Y. ; Jacob, C. ; Ohshima, S. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.331-334,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
48.

Conference Proceedings
Conference Proceedings
48. Homoepitaxial Growth of Cubic Silicon Carbide by Sublimation Epitaxy
Furusho, T. ; Miyanagi, T. ; Okui, Y. ; Ohshima, S. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.279-282,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
49.

Conference Proceedings
Conference Proceedings
49. Anisotropy of Electron Mobility in n-Type 15R-SiC Studied by Raman Scattering
Kurimoto, E. ; Hangyo, M. ; Harima, H. ; Kisoda, K. ; Nishiguchi, T. ; Nishino, S. ; Nakashima, S. ; Katsuno, M. ; Ohtani, N.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.621-624,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
50.

Conference Proceedings
Conference Proceedings
50. High Quality SiC Bulk Growth by Sublimation Method using Elemental Silicon and Carbon Powder as SiC Source Materials
Ota, S. ; Furusho, T. ; Takagi, H. ; Oshima, S. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.115-118,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
51.

Conference Proceedings
Conference Proceedings
51. Production of 8-Inch SiC Wafer by Hybridization of Single and Polycrystalline SiC Wafers
Murata, K. ; Fujioka, N. ; Chinone, Y. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.241-246,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
52.

Conference Proceedings
Conference Proceedings
52. Investigation of Graphite Particle Inclusions in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique
Nishiguchi, T. ; Nakamura, M. ; Isshiki, T. ; Ohshima, S. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.47-50,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
53.

Conference Proceedings
Conference Proceedings
53. Surface Morphology of 4H-SiC Inclined towards <1-100> and <11-20> Grown by APCVD Using the Si2Cl6+C3H8 System
Masuda, Y. ; Ohshima, S. ; Jacob, C. ; Nishino, S.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.139-142,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
54.

Conference Proceedings
Conference Proceedings
54. Low Temperature Selective and Lateral Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates
Jacob, C. ; Pirouz, P. ; Nishino, S.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.127-130,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
55.

Conference Proceedings
Conference Proceedings
55. Hot-Wall CVD Growth of 4H-SiC Using Si2Cl6+C3H8+H2 System
Miyanagi, T. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.199-202,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
56.

Conference Proceedings
Conference Proceedings
56. The Effect of Epitaxial Growth on Warp of SiC Wafers
Nakayama, K. ; Miyanagi, Y. ; Maruyama, K. ; Okamoto, Y. ; Shiomi, H. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.235-238,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
57.

Conference Proceedings
Conference Proceedings
57. Uniformization of Radial Temperature Gradient in Sublimation Growth of SiC
Tanaka, H. ; Nishiguchi, T. ; Sasaki, M. ; Ohshima, S. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.71-74,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
58.

Conference Proceedings
Conference Proceedings
58. Homoepitaxial Growth of Cubic Silicon Carbide by Sublimation Epitaxy
Furusho, T. ; Miyanagi, T. ; Okui, Y. ; Ohshima, S. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.279-282,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
59.

Conference Proceedings
Conference Proceedings
59. Crystal Growth of Aluminum Nitride by Sublimation Close Space Technique
Furusho, T. ; Ohshima, S. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1449-1452,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
60.

Conference Proceedings
Conference Proceedings
60. Selective Epitaxial Growth of Pyramidal 3C-SiC on Patterned Si Substrate
Okui, Y. ; Jacob, C. ; Ohshima, S. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.331-334,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
61.

Conference Proceedings
Conference Proceedings
61. Structural Analysis of (211) 3C-SiC on (211) Si Substrates Grown by Chemical Vapor Deposition
Nishiguchi, T. ; Mukai, Y. ; Nakamura, M. ; Nishio, K. ; Isshiki, T. ; Ohshima, S. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.285-288,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
62.

Conference Proceedings
Conference Proceedings
62. Crystal Growth of 6H-SiC(01-14) on 3C-SiC(001) Substrate by Sublimation Epitaxy
Takagi, H. ; Nishiguchi, T. ; Ohta, S. ; Furusho, T. ; Ohshima, S. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.289-292,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
63.

Conference Proceedings
Conference Proceedings
63. Crystal Growth of 15R-SiC and Various Polytype Substrates
Nishiguchi, T. ; Shimizu, T. ; Sasaki, M. ; Oshima, S. ; Nishino, S.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.69-72,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
64.

Conference Proceedings
Conference Proceedings
64. Micropipe Filling by the Sublimation Close Space Technique
Furusho, T. ; Ohshima, S. ; Nishino, S.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.73-76,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
65.

Conference Proceedings
Conference Proceedings
65. Mechanism for Damage Healing of Cracked 6H-SiC Substrates by the Sublimation Method
Shimizu, T. ; Nishiguchi, T. ; Sasaki, M. ; Ohshima, S. ; Nishino, S.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.77-80,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
66.

Conference Proceedings
Conference Proceedings
66. Gaseous Etching Effects on Homoepitaxial Growth of SiC on Hemispherical Substrates Using CVD
Nishino, S. ; Masuda, Y. ; Ohshima, S. ; Jacob, C.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.123-126,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
67.

Conference Proceedings
Conference Proceedings
67. Pendeo Epitaxial Growth of 3C-SiC on Si Substrates
Shoji, A. ; Okui, Y. ; Nishiguchi, T. ; Ohshima, S. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.257-260,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
68.

Conference Proceedings
Conference Proceedings
68. Thermal Etching of 6H-SiC (11-20) Substrate Surface
Nishiguchi, T. ; Ohshima, S. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.701-704,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
69.

Conference Proceedings
Conference Proceedings
69. Observation of Planar Defects in 2-inch SiC Wafer
Tanaka, H. ; Nishiguchi, T. ; Sasaki, M. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.79-82,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
70.

Conference Proceedings
Conference Proceedings
70. Characterization of 2in SiC As-Grown Bulk by SWBXT at SPring-8
Sasaki, M. ; Hirai, A. ; Miyanagi, T. ; Furusho, T. ; Nishiguchi, T. ; Shiomi, H. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.407-410,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
71.

Conference Proceedings
Conference Proceedings
71. Observation of 2in SiC Wafer by SWBXT at SPring-8
Sasaki, M. ; Hirai, A. ; Miyanagi, T. ; Furusho, T. ; Nishiguchi, T. ; Shiomi, H. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.411-414,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
72.

Conference Proceedings
Conference Proceedings
72. The Development of 2in 6H-SiC Wafer with High Thermal-Conductivity
Miyanagi, Y. ; Nakayama, K. ; Shiomi, H. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.51-54,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
73.

Conference Proceedings
Conference Proceedings
73. The Effect of Nitrogen on Crystal Growth of SiC on (11-20) Substrates
Nishiguchi, T. ; Masuda, Y. ; Ohshima, S. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.115-118,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
74.

Conference Proceedings
Conference Proceedings
74. Stress Distribution in 2in SiC Wafer Measured by Photoelastic Method
Sasaki, M. ; Miyanagi, Y. ; Nakayama, K. ; Shiomi, H. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.403-406,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
75.

Conference Proceedings
Conference Proceedings
75. Temperature Dependence of Sublimation Growth of 6H-SiC on (11-20) Substrates
Nishiguchi, T. ; Masuda, Y. ; Ohshima, Satoru ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.119-122,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
76.

Conference Proceedings
Conference Proceedings
76. The Development of 4H-SiC {03-38} Wafers
Nakayama, K. ; Miyanagi, Y. ; Shiomi, H. ; Nishino, S. ; Kimoto, T. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.123-126,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
77.

Conference Proceedings
Conference Proceedings
77. Sublimation Growth of SiC Crystal Using Modified Crucible Design on 4H-SiC {03-38} Substrate and Defect Analysis
Furusho, T. ; Takagi, H. ; Ota, S. ; Shiomi, H. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.107-110,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
78.

Conference Proceedings
Conference Proceedings
78. Control of Pendeo Epitaxial Growth of 3C-SiC on Silicon Substrate
Okui, Y. ; Jacob, C. ; Ohshima, S. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.209-212,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
79.

Conference Proceedings
Conference Proceedings
79. INVERSION-TYPE MOS FIELD EFFECT TRANSISTORS USING CVD-GROWN CUBIC SiC ON Si
Shibahara, K. ; Takeuchi, T. ; Saitch, T. ; Nishino, S. ; Matsunami, H.
Pub. info.: Novel refractory semiconductors : symposium held April 21-23, 1987, Anaheim, California, U.S.A..  pp.247-252,  1987.  Pittsburgh, Penn..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 97