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31 results

Conference Proceedings

1. Channel Epitaxy of 3C-SiC on Si Substrates by CVD

Nishino, S. ; Okui, Y. ; Jacob, C. ; Ohshima, S.

Pub. info.:	Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.. pp.15-22, 2003. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	742

Conference Proceedings

2. Sublimation Growth of 6H-SiC Boule on Various a-Plane Substrates

Nishino, S. ; Nishiguchi, T. ; Masuda, Y. ; Sasaki, M. ; Ohshima, S.

Pub. info.:	Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.. 2001. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	640

Conference Proceedings

3. Epitaxial Growth of 3C-SiC on T-Shape Columnar Si Substrates

Nishino, S. ; Shoji, A. ; Nishiguchi, T. ; Ohshima, S.

Pub. info.:	Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A.. pp.65-70, 2004. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	815

Conference Proceedings

4. Microfabrication of Si Column Covered with SiC Film for Electron Emitter

Nakata, T. ; Ohshiro, Y. ; Shoji, A. ; Okui, Y. ; Ohshima, S. ; Hayashi, Y. ; Nishino, S.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.237-240, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

5. Suppression Mechanism of Double Positioning Growth in 3C-SiC(111) Crystal by Using an Off-Axis Si(110) Substrate

Nakamura, M. ; Isshiki, T. ; Nishiguchi, T. ; Nishio, K. ; Ohshima, S. ; Nishino, S.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.181-184, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

6. Microstructures in the Pendeo Epitaxial Layer of 3C-SiC on Si Substrate

Shoji, A. ; Nakamura, M. ; Mitikami, K. ; Isshiki, T. ; Ohshima, S. ; Nishino, S.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.221-224, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

7. Influence of Substrate Roughness on the Formation of Defects in 3C-SiC Grown on Si(110) Substrate by Hetero-Epitaxial CVD Method

Isshiki, T. ; Nakamura, M. ; Nishiguchi, T. ; Nishio, K. ; Ohshima, S. ; Nishino, S.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.185-188, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

8. Lateral Epitaxial Overgrowth of 3C-SiC on Si Substrates by CVD Method

Sugishita, S. ; Shoji, A. ; Mukai, Y. ; Nishiguchi, T. ; Michikami, K. ; Issiki, T. ; Ohshima, S. ; Nishino, S.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.177-180, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

9. Suppression of the Twin Formation in CVD Growth of (111) 3C-SiC on (110) Si Substrate

Nishiguchi, T. ; Nakamura, M. ; Nishio, K. ; Isshiki, T. ; Ohshima, S. ; Nishino, S.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.193-196, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

10.

Conference Proceedings

10. Preparation of Porous 4H-SiC by Surface Anodization

Chen, Y. ; Shoji, S. ; Sugishita, S. ; Ohshima, S. ; Nishino, S.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.257-260, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

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