1.

Conference Proceedings
Conference Proceedings
1. Dynamic Characteristics of 4H-SiC pin Dlode on (000-1)C-Face with Small Forward Degradation
Nakayama, K. ; Sugawara, Y. ; Ishii, R. ; Tsuchida, H. ; Miyanagi, T. ; Kamata, I. ; Nakamura, T.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1359-1362,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC(000-1) and (0001) Epitaxy
Tsuchida, H. ; Kamata, I. ; Miyanagi, T. ; Nakamura, T. ; Nakayama, K. ; Ishii, R. ; Sugawara, Y.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.231-234,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. Deep Level Defects Related to Carbon Displacements in n- and p-Type 4H-SiC
Storasta, L. ; Kamata, I. ; Nakamura, T. ; Tsuchida, H.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.489-492,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
4.

Conference Proceedings
Conference Proceedings
4. Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers
Kamata, I. ; Tsuchida, H. ; Miyanagi, T. ; Nakamura, T.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.415-418,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
5.

Conference Proceedings
Conference Proceedings
5. Observation of Shrinking and Reformation of Shockley Stacking Faults by PL Mapping
Miyanagi, T. ; Tsuchida, H. ; Kamata, I. ; Nakamura, T. ; Ishii, R. ; Nakayama, K. ; Sugawara, Y.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.375-378,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
6.

Conference Proceedings
Conference Proceedings
6. Comparison of Electrical Characteristics of 4H-SiC(0001) and (000-1) Schottky Barrier Diodes
Nakamura, T. ; Miyanagi, T. ; Kamata, I. ; Tsuchida, H.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.927-930,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
7.

Conference Proceedings
Conference Proceedings
7. Homoepitaxial Growth and Characterization of Thick SiC Layers With a Reduced Micropipe Density
Tsuchida, H. ; Kamata, I. ; Izumi, S. ; Tawara, T. ; Jikimoto, T. ; Miyanagi, T. ; Nakamura, T. ; Izumi, K.
Pub. info.: Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A..  pp.35-46,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 815
8.

Conference Proceedings
Conference Proceedings
8. Improvement in Electrical Performance of Schottky Contacts for High-Voltage Diode
Nakamura, T. ; Miyanagi, T. ; Tsuchida, H. ; Kamata, I. ; Jikimoto, T. ; Izumi, K.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.721-724,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
9.

Conference Proceedings
Conference Proceedings
9. 8.3 kV 4H-SiC PiN Diode on (0001) C-Face with Small Forward Voltage Degradation
Nakayama, K. ; Sugawara, Y. ; Tsuchida, H. ; Miyanagi, T. ; Kamata, I. ; Nakamura, T. ; Asano, K. ; Ishii, R.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.969-972,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485