1.

Conference Proceedings
Conference Proceedings
1. TDDB Measurement of Gate SiO2 on 4H-SiC Formed by Chemical Vapor Deposition
K. Fujihira ; S. Yoshida ; N. Miura ; Y. Nakao ; M. Imaizumi
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.799-802,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
2.

Conference Proceedings
Conference Proceedings
2. Observation of Crystalline Defects Causing pn Junction Reverse Leakage Current
T. Watanabe ; Y. Nakao ; K. Fujihira ; N. Miura ; Y. Tarui
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.999-1002,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
3.

Conference Proceedings
Conference Proceedings
3. Investigation into Short-Circuit Ruggedness of 1.2 kV 4H-SiC MOSFETs
Y. Nakao ; S. Watanabe ; N. Miura ; M. Imaizumi ; T. Oomori
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.1123-1126,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
4.

Conference Proceedings
Conference Proceedings
4. SiC-MOSFET Structure Enabling Fast Turn-On and -Off Switching
S. Hino ; N. Miura ; A. Furukawa ; S. Watanabe ; Y. Nakao
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.1097-1100,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
5.

Conference Proceedings
Conference Proceedings
5. Realization of Low On-Resistance 4H-SiC Power MOSFETs by Using Retrograde Profile in P-Body
K. Fujihira ; N. Miura ; T. Watanabe ; Y. Nakao ; N. Yutani ; K.I. Ohtsuka ; M. Imaizumi ; T. Takami ; T. Oomori
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.827-830,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557