1.

Conference Proceedings
Conference Proceedings
1. Anomalously High Channel Mobility in SiC-MOSFETs with Al2O3/SiOx/SiC Gate Structure
S. Hino ; T. Hatayama ; J. Kato ; N. Miura ; T. Oomori
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.683-686,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
2.

Conference Proceedings
Conference Proceedings
2. Effect of Oxidant in MOCVD-Growth of Al2O3 Gate Insulator on 4H-SiC MOSFET Properties
H. Moriya ; S. Hino ; N. Miura ; T. Oomori ; E. Tokumitsu
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.777-780,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
3.

Conference Proceedings
Conference Proceedings
3. Investigation into Short-Circuit Ruggedness of 1.2 kV 4H-SiC MOSFETs
Y. Nakao ; S. Watanabe ; N. Miura ; M. Imaizumi ; T. Oomori
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.1123-1126,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
4.

Conference Proceedings
Conference Proceedings
4. Fabrication and Characterization of 4H-SiC MOSFET with MOCVD-Grown Al2O3 Gate Insulator
S. Hino ; T. Hatayama ; N. Miura ; T. Oomori ; E. Tokumitsu
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.787-790,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
5.

Conference Proceedings
Conference Proceedings
5. Realization of Low On-Resistance 4H-SiC Power MOSFETs by Using Retrograde Profile in P-Body
K. Fujihira ; N. Miura ; T. Watanabe ; Y. Nakao ; N. Yutani ; K.I. Ohtsuka ; M. Imaizumi ; T. Takami ; T. Oomori
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.827-830,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557