1.

Conference Proceedings
Conference Proceedings
1. Anomalously High Channel Mobility in SiC-MOSFETs with Al2O3/SiOx/SiC Gate Structure
S. Hino ; T. Hatayama ; J. Kato ; N. Miura ; T. Oomori
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.683-686,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
2.

Conference Proceedings
Conference Proceedings
2. Effect of Oxidant in MOCVD-Growth of Al2O3 Gate Insulator on 4H-SiC MOSFET Properties
H. Moriya ; S. Hino ; N. Miura ; T. Oomori ; E. Tokumitsu
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.777-780,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
3.

Conference Proceedings
Conference Proceedings
3. SiC-MOSFET Structure Enabling Fast Turn-On and -Off Switching
S. Hino ; N. Miura ; A. Furukawa ; S. Watanabe ; Y. Nakao
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.1097-1100,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
4.

Conference Proceedings
Conference Proceedings
4. Fabrication and Characterization of 4H-SiC MOSFET with MOCVD-Grown Al2O3 Gate Insulator
S. Hino ; T. Hatayama ; N. Miura ; T. Oomori ; E. Tokumitsu
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.787-790,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
5.

Conference Proceedings
Conference Proceedings
5. Investigation on Internally Unbalanced Switching Behavior for Realization of 1-cm2 SiC-MOSFET
S. Hino ; M. Ito ; N. Miura ; M. Imaizumi ; S. Yamakawa
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.963-966,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
6.

Conference Proceedings
Conference Proceedings
6. Depletion-Mode TDDB for n-Type MOS Capacitors of 4H-SiC
T. Watanabe ; S. Hino ; Y. Ebiike ; N. Miura ; M. Imaizumi
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.517-520,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780