1.

Conference Proceedings
Conference Proceedings
1. TDDB Measurement of Gate SiO2 on 4H-SiC Formed by Chemical Vapor Deposition
K. Fujihira ; S. Yoshida ; N. Miura ; Y. Nakao ; M. Imaizumi
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.799-802,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
2.

Conference Proceedings
Conference Proceedings
2. Investigation into Short-Circuit Ruggedness of 1.2 kV 4H-SiC MOSFETs
Y. Nakao ; S. Watanabe ; N. Miura ; M. Imaizumi ; T. Oomori
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.1123-1126,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
3.

Conference Proceedings
Conference Proceedings
3. Realization of Low On-Resistance 4H-SiC Power MOSFETs by Using Retrograde Profile in P-Body
K. Fujihira ; N. Miura ; T. Watanabe ; Y. Nakao ; N. Yutani ; K.I. Ohtsuka ; M. Imaizumi ; T. Takami ; T. Oomori
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.827-830,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
4.

Conference Proceedings
Conference Proceedings
4. Investigation on Internally Unbalanced Switching Behavior for Realization of 1-cm2 SiC-MOSFET
S. Hino ; M. Ito ; N. Miura ; M. Imaizumi ; S. Yamakawa
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.963-966,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
5.

Conference Proceedings
Conference Proceedings
5. Novel Gate Oxide Process for Realization of High Threshold Voltage in 4H-SiC MOSFET
M. Furuhashi ; T. Tanioka ; M. Imaizumi ; N. Miura ; S. Yamakawa
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.985-988,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
6.

Conference Proceedings
Conference Proceedings
6. Depletion-Mode TDDB for n-Type MOS Capacitors of 4H-SiC
T. Watanabe ; S. Hino ; Y. Ebiike ; N. Miura ; M. Imaizumi
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.517-520,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780