1.

Conference Proceedings
Conference Proceedings
1. Hetero-Epitaxial Growth of 3C-SiC on SOI using HMDS
Aboughe-Nze, P. ; Planes, N. ; Ravetz, M. ; Fraisse, B. ; Contreras, S. ; Vicente, P. ; Chassagne, T. ; Monteil, Y. ; Rushworth, S. ; Camassel, J.
Pub. info.: Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia.  pp.92-99,  1999.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-35
2.

Conference Proceedings
Conference Proceedings
2. Characterization of 3C-SiC/SOI Deposited with HMDS
Planes, N. ; Aboughe-Nze, P. ; Ravetz, M. ; Contreras, S. ; Vicente, P. ; Chassagne, T. ; Fraisse, B. ; Camassel, J. ; Monteil, Y. ; Rushworth, S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.599-602,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
3.

Conference Proceedings
Conference Proceedings
3. 3C-SiC Pseudosubstrates for the Growth of Cubic GaN
Aboughe-Nze, P. ; Chassagne, T. ; Chaussende, D. ; Monteil, Y. ; Cauwet, F. ; Bustarret, E. ; Deneuville, A. ; Bentoumi, G. ; Martinez-Guerrerro, E. ; Daudin, B. ; Feuillet, G.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1467-1470,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
4.

Conference Proceedings
Conference Proceedings
4. Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI
Chassagne, T. ; Ferro, G. ; Wang, H. ; Stoemenos, Y. ; Peyre, H. ; Contreras, S. ; Camassel, J. ; Monteil, Y. ; Ghyselen, B.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.343-346,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
5.

Conference Proceedings
Conference Proceedings
5. Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI
Chassagne, T. ; Ferro, G. ; Wang, H. ; Stoemenos, Y. ; Peyre, H. ; Contreras, S. ; Camassel, J. ; Monteil, Y. ; Ghyselen, B.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.343-346,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
6.

Conference Proceedings
Conference Proceedings
6. Checker-Board Carbonization for Control and Reduction of the Mean Curvature of 3C-SiC Layers Grown on Si(100) Substrates
Chassagne, T. ; Ferro, G. ; Haas, H. ; Leycuras, A. ; Mank, H. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.265-268,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
7.

Conference Proceedings
Conference Proceedings
7. How to Grow Unstrained 3C-SiC Heteroepitaxial Layers on Si (100) Substrates
Chassagne, T. ; Ferro, G. ; Gourbeyre, C. ; Berre, M.Le ; Barbier, D. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.155-158,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356