1.

Conference Proceedings
Conference Proceedings
1. X-Band ENDOR of Boron and Beryllium Acceptors in Silicon Carbide
Hofstaetter,A. ; Meyer,B.K. ; Scharmann,A. ; Baranov,P.G. ; Ilyin,I.V. ; Mokhov,E.N.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.595-598,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
2.

Conference Proceedings
Conference Proceedings
2. Eleetron Paramaguetic Resonance of Erbium in Bulk Silicon Carbide Crystals
Baranov,P.G. ; Ilyin,I.V. ; Mokhov,E.N.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.607-610,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
3.

Conference Proceedings
Conference Proceedings
3. Electron paramagnetic resonance of erbium in bulk silicon carbide crystals
Baranov,P.G. ; Ilyin,I.V. ; Mokhov,E.N.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part3  pp.1539-1544,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263