1.

Conference Proceedings
Conference Proceedings
1. Growth and Characterization of Semipolar InGaN/GaN Multiple Quantum Wells and Light-Emitting Diodes on (1011) GaN Templates
Chakraborty, Arpan ; Onuma, T. ; Baker, T. J. ; Keller, S. ; Chichibu, S. F. ; DenBaars, S. P. ; Nakamura, S. ; Speck, J. S. ; Mishra, U. K.
Pub. info.: Progress in semiconductor materials V--novel materials and electronic and optoelectronic applications : symposium held November 28-December 1, 2005, Boston, Massachusetts, U.S.A..  pp.231-238,  2006.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 891
2.

Conference Proceedings
Conference Proceedings
2. Growth and Characterization of Semipolar InGaN/GaN Multiple Quantum Wells and Light-Emitting Diodes on (10-1-1) GaN Templates
Chakraborty, Arpan ; Onuma, T. ; Baker, T. J. ; Keller, S. ; Chichibu, S. F. ; DenBaars, S. P. ; Nakamura, S. ; Speck, J. S. ; Mishra, U. K.
Pub. info.: GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A..  pp.143-150,  2006.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 892
3.

Conference Proceedings
Conference Proceedings
3. Amplification Path Length Dependence Studies of Stimulated Emission From Optically Pumped InGaN/GaN Multiple Quantum Wells
Schmidt, T. J. ; Bidnyk, S. ; Cho, Y-H. ; Fischer, A. J. ; Song, J. J. ; Keller, S. ; Mishra, U. K. ; DenBaars, S. P.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G6.54.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
4.

Conference Proceedings
Conference Proceedings
4. Deep levels in n-type schottky and p+ -n homojunction GaN diodes
Hierro, A. ; Kwon, D. ; Ringel, S. A. ; Hansen, M. ; Mishra, U. K. ; DenBaars, S. P. ; Speck, J. S.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.80.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
5.

Conference Proceedings
Conference Proceedings
5. Nondegenerate optical pump-probe spectroscopy of highly excited group III nitrides
Schmidt, T. J. ; Song, J. J. ; Keller, S. ; Mishra, U. K. ; DenBaars, S. P. ; Yang, W.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.433-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572
6.

Conference Proceedings
Conference Proceedings
6. Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes
Hansen, M. ; Abare, A. C. ; Kozodoy, P. ; Katona, T. M. ; Craven, M. D. ; Speck, J. S. ; Mishra, U. K. ; Coldren, L. A. ; DenBaars, S. P.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W1.4.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
7.

Conference Proceedings
Conference Proceedings
7. MOCVD Growth of High Output Power InGaN Multiple-Quantum-Well Light-Emitting Diode
Kozodoy, P. ; Abare, A. ; Sink, R. K. ; Mack, M. ; Keller, S. ; DenBaars, S. P. ; Mishra, U. K. ; Steigerwald, D.
Pub. info.: Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.481-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 468
8.

Conference Proceedings
Conference Proceedings
8. Electrical transport of an AlGaN/GaN two-dimensional electron gas
Saxler, A. ; Debray, P. ; Perrin, R. ; Elhamri, S. ; Mitchel, W. C. ; Elsass, C. R. ; Smorckkova, I. P. ; Heying, B. ; Haus, E. ; Fini, P. ; Ibbetson, J. P. ; Keller, S. ; Petroff, P. M. ; DenBaars, S. P. ; Mishra, U. K. ; Speck, J. S.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.10.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
9.

Conference Proceedings
Conference Proceedings
9. Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using a Two-Step Process
Marchand, H. ; Ibbetson, J. P. ; Fini, P. T. ; Wu, X. H. ; Keller, S. ; DenBaars, S. P. ; Speck, J. S. ; Mishra, U. K.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G4.5.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
10.

Conference Proceedings
Conference Proceedings
10. Polarity determination for MOCVD growth of GaN on Si(111) by convergent beam electron diffraction
Zhao, L. ; Marchand, H. ; Fini, P. ; DenBaars, S. P. ; Mishra, U. K. ; Speck, J. S.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W3.3.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
11.

Conference Proceedings
Conference Proceedings
11. Scanning tunneling microscope-induced luminescence studies of defects in GaN layers and heterostructures
Evoy, S. ; Harnett, C. K. ; Keller, S. ; Mishra, U. K. ; DenBaars, S. P. ; Craighead, H. G.
Pub. info.: Optical microstructural characterization of semiconductors : sympoisum held November 29-30, 1999, Boston, Massachusetts, U.S.A..  pp.19-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 588
12.

Conference Proceedings
Conference Proceedings
12. Optical Characteristics of MOCVD-Grown InGaN/GaN Multiple Quantum Wells Investigated by Excitation Energy Dependent PL and PLE Spectroscopy
Cho, Yong-Hoon ; Song, J. J. ; Keller, S. ; Mishra, U. K. ; DenBaars, S. P.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.267-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
13.

Conference Proceedings
Conference Proceedings
13. Study of Stimulated Emission in InGaN/GaN Multiquantum Wells in the Temperature Range of 175-575 K
Bidnyk, S. ; Cho, Y. H. ; Schmidt, T. J. ; Krasinski, J. ; Song, J. J. ; Keller, S. ; Mishra, U. K. ; DenBaars, S. P.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.199-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
14.

Conference Proceedings
Conference Proceedings
14. Influence of Si-Doping on Carrier Localization of MOCVD-Grown InGaN/GaN Multiple Quantum Wells
Cho, Y-H. ; Schmidt, T. J. ; Bidnyk, S. ; Song, J. J. ; Keller, S. ; Mishra, U. K. ; DenBaars, S. P.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G6.44.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
15.

Conference Proceedings
Conference Proceedings
15. Growth of High Quality (In,Ga,Al)N/GaN Heterostructure Materials and Devices by Atmospheric Pressure MOCVD
DenBaars, S. P. ; Keller, S. ; Keller, B. P. ; Wu. Y. F. ; Kapolnek, D. ; Mishra, U. K.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.23-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423
16.

Conference Proceedings
Conference Proceedings
16. GaInAs/GaInP DOUBLE BARRIER STRUCTURES: GROWTH AND APPLICATION IN TUNNELING DIODES
Reaves, C. M. ; Yen, J. C. ; Cevallos, N. A. ; Mishra, U. K. ; DenBaars, S. P.
Pub. info.: Compound semiconductor epitaxy : symposium held April 4-7, 1994, San Francisco, California, U.S.A..  pp.147-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 340
17.

Conference Proceedings
Conference Proceedings
17. Persistent Photoconductivity in a High Mobility two Dimensional Electron Gas in an AlGaN/GaN Heterostructure
Elhamri, S. ; Saxler, A. ; Cull, D. ; Mitchel, W.C. ; Elsass, C.R. ; Smorchkova, I. P. ; Heying, B. ; Poblenz, C. ; Fini, P. ; Keller, S. ; Petroff, P. M. ; DenBaars, S.P. ; Mishra, U. K. ; Speci, J. S.
Pub. info.: GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 639
18.

Conference Proceedings
Conference Proceedings
18. Carbon-Related Deep States in Compensated n-Type and Semi-Insulating GaN:C and their Influence on Yellow Luminescence
Armstrong, A. ; Green, D. ; Arehart, A. R. ; Mishra, U. K. ; Speck, J. S. ; Ringel, S. A.
Pub. info.: GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A..  pp.311-316,  2005.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 831
19.

Conference Proceedings
Conference Proceedings
19. Comparative study of emission from highly excited (In, Al) GaN thin films and heterostructures
Little, B. D. ; Bidnyk, S. ; Schmidt, T. J. ; Lam, J. B. ; Kwon, Y. H. ; Song, J. J. ; Keller, S. ; Mishra, U. K. ; DenBaars, S. P. ; Yang, W.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.351-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572
20.

Conference Proceedings
Conference Proceedings
20. Maskless lateral epitaxial overgrowth of GaN on sapphire
Fini, P. ; Marchand, H. ; Ibbetson, J. P. ; Moran, B. ; Zhao, L. ; DenBaars, S. P. ; Speck, J. S. ; Mishra, U. K.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.315-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572
21.

Conference Proceedings
Conference Proceedings
21. Fabrication and characterization of GaN junction field effect transistors
Zhang, L. ; Lester, L. F. ; Baca, A. G. ; Shul, R. J. ; Chang, P. C. ; Willison, C. G. ; Mishra, U. K. ; DenBaars, S. P. ; Zolper, J. C.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W4.9.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
22.

Conference Proceedings
Conference Proceedings
22. Stimulated Emission and Gain Measurements from InGaN/GaN Heterostructures
Shmagin, I. K. ; Muth, J. F. ; Krishnankutty, S. ; Kolbas, R. M. ; Keller, S. ; Mishra, U. K. ; DenBaars, S. P.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.1209-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449