1.

Conference Proceedings
Conference Proceedings
1. Growth and Characterization of Semipolar InGaN/GaN Multiple Quantum Wells and Light-Emitting Diodes on (1011) GaN Templates
Chakraborty, Arpan ; Onuma, T. ; Baker, T. J. ; Keller, S. ; Chichibu, S. F. ; DenBaars, S. P. ; Nakamura, S. ; Speck, J. S. ; Mishra, U. K.
Pub. info.: Progress in semiconductor materials V--novel materials and electronic and optoelectronic applications : symposium held November 28-December 1, 2005, Boston, Massachusetts, U.S.A..  pp.231-238,  2006.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 891
2.

Conference Proceedings
Conference Proceedings
2. Growth and Characterization of Semipolar InGaN/GaN Multiple Quantum Wells and Light-Emitting Diodes on (10-1-1) GaN Templates
Chakraborty, Arpan ; Onuma, T. ; Baker, T. J. ; Keller, S. ; Chichibu, S. F. ; DenBaars, S. P. ; Nakamura, S. ; Speck, J. S. ; Mishra, U. K.
Pub. info.: GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A..  pp.143-150,  2006.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 892
3.

Conference Proceedings
Conference Proceedings
3. Amplification Path Length Dependence Studies of Stimulated Emission From Optically Pumped InGaN/GaN Multiple Quantum Wells
Schmidt, T. J. ; Bidnyk, S. ; Cho, Y-H. ; Fischer, A. J. ; Song, J. J. ; Keller, S. ; Mishra, U. K. ; DenBaars, S. P.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G6.54.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
4.

Conference Proceedings
Conference Proceedings
4. Nondegenerate optical pump-probe spectroscopy of highly excited group III nitrides
Schmidt, T. J. ; Song, J. J. ; Keller, S. ; Mishra, U. K. ; DenBaars, S. P. ; Yang, W.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.433-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572
5.

Conference Proceedings
Conference Proceedings
5. MOCVD Growth of High Output Power InGaN Multiple-Quantum-Well Light-Emitting Diode
Kozodoy, P. ; Abare, A. ; Sink, R. K. ; Mack, M. ; Keller, S. ; DenBaars, S. P. ; Mishra, U. K. ; Steigerwald, D.
Pub. info.: Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.481-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 468
6.

Conference Proceedings
Conference Proceedings
6. Electrical transport of an AlGaN/GaN two-dimensional electron gas
Saxler, A. ; Debray, P. ; Perrin, R. ; Elhamri, S. ; Mitchel, W. C. ; Elsass, C. R. ; Smorckkova, I. P. ; Heying, B. ; Haus, E. ; Fini, P. ; Ibbetson, J. P. ; Keller, S. ; Petroff, P. M. ; DenBaars, S. P. ; Mishra, U. K. ; Speck, J. S.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.10.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
7.

Conference Proceedings
Conference Proceedings
7. Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using a Two-Step Process
Marchand, H. ; Ibbetson, J. P. ; Fini, P. T. ; Wu, X. H. ; Keller, S. ; DenBaars, S. P. ; Speck, J. S. ; Mishra, U. K.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G4.5.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
8.

Conference Proceedings
Conference Proceedings
8. Scanning tunneling microscope-induced luminescence studies of defects in GaN layers and heterostructures
Evoy, S. ; Harnett, C. K. ; Keller, S. ; Mishra, U. K. ; DenBaars, S. P. ; Craighead, H. G.
Pub. info.: Optical microstructural characterization of semiconductors : sympoisum held November 29-30, 1999, Boston, Massachusetts, U.S.A..  pp.19-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 588
9.

Conference Proceedings
Conference Proceedings
9. Optical Characteristics of MOCVD-Grown InGaN/GaN Multiple Quantum Wells Investigated by Excitation Energy Dependent PL and PLE Spectroscopy
Cho, Yong-Hoon ; Song, J. J. ; Keller, S. ; Mishra, U. K. ; DenBaars, S. P.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.267-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
10.

Conference Proceedings
Conference Proceedings
10. Study of Stimulated Emission in InGaN/GaN Multiquantum Wells in the Temperature Range of 175-575 K
Bidnyk, S. ; Cho, Y. H. ; Schmidt, T. J. ; Krasinski, J. ; Song, J. J. ; Keller, S. ; Mishra, U. K. ; DenBaars, S. P.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.199-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512