1.

Conference Proceedings
Conference Proceedings
1. Optical Characterization of Full SiC Wafer
El Harrouni, I. ; Bluet, J.M. ; Ziane, D. ; Mermoux, M. ; Baillet, F. ; Guillot, G.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.593-596,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
2.

Conference Proceedings
Conference Proceedings
2. Raman Imaging Characterization of Structural and Electrical Properties in 4H SiC
Mermoux, M. ; Crisci, A. ; Baillet, F.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.609-612,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
3.

Conference Proceedings
Conference Proceedings
3. Characterization of 4H-SiC PiN Diodes by Micro-Raman Scattering and Photoemission
Thuaire, A. ; Mermoux, M. ; Crisci, A. ; Camara, N. ; Bano, E. ; Baillet, F. ; Pernot, E.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.437-440,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
4.

Conference Proceedings
Conference Proceedings
4. Raman Imaging Analysis of SiC Wafers
Mermoux, M. ; Crisci, A. ; Baillet, F.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.353-356,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
5.

Conference Proceedings
Conference Proceedings
5. Characterization of Thick 2-Inch 4H-SiC Layers Grown by the Continuous Feed-Physical Vapor Transport Method
Chaussende, D. ; Balloud, C. ; Auvray, L. ; Baillet, F. ; Zielinski, M. ; Juillaguet, S. ; Mermoux, M. ; Pernot, E. ; Camassel, J. ; Pons, M. ; Madar, R.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.91-94,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460