1.

Conference Proceedings
Conference Proceedings
1. Design and Fabrication of Nitride-Based High-Power Devices
Bandic, Z. Z. ; Piquette, E. C. ; Bridger, P. M. ; Kuech, T. F. ; McGill, T. C.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.399-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
2.

Conference Proceedings
Conference Proceedings
2. Nitride-Based High-Power Devices: Transport Properties, Linear Defects, and Goals
Bandic, Z. Z. ; Bridger, P. M. ; Piquette, E. C. ; Beach, R. A. ; Phanse, V. M. ; Vaudo, R. P. ; Redwing, J. ; McGill, T. C.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.27-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
3.

Conference Proceedings
Conference Proceedings
3. Growth of III-Nitrides by rf-Assisted Molecular-Beam Epitaxy
Piquette, E. C. ; Bridger, P. M. ; Bandic, Z. Z. ; McGill, T. C.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.387-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
4.

Conference Proceedings
Conference Proceedings
4. Localized charge storage in CeO2/Si(111) by electrostatic force Microscopy
Jones, J. T. ; Bridger, P. M. ; Marsh, O. J. ; McGill, T. C.
Pub. info.: Materials issues and modeling for device nanofabrication : symposia held November 29-December 2, 1999, Boston, Massachusetts, U.S.A..  pp.331-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 584
5.

Conference Proceedings
Conference Proceedings
5. Effect of Buffer Layer and III/V Ratio on the Surface Morphology of GaN Grown by MBE
Piquette, E. C. ; Bridger, P. M. ; Beach, R. A. ; McGill, T. C.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.77.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537