Search records | 東京工業大学附属図書館文献データベース

Sort order

10 | 50 | 100 / Per Page

33 results

Conference Proceedings

1. Phosphorus Doping Effects on Si1-xGex Epitaxial Film Growth in the SiH4-GeH4-PH3 Gas System Using Ultraclean LPCVD

Lee, C.J. ; Sakuraba, M. ; Ishii, M. ; Matsuura, T. ; Murota, J. ; Kawashima, I. ; Yabumoto, N.

Pub. info.:	Chemical vapor deposition : proceedings of the Fourteenth International Conference and EUROCVD-11. pp.1356-1363, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-25

Conference Proceedings

2. Low Frequency Noise in Sil-xGex Channel PMOSFETs

Tsuchiya, T. ; Matsuura, T. ; Murota, J.

Pub. info.:	ULSI Process Integration : proceedings of the International Symposium. pp.205-210, 2001. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2001-2

Conference Proceedings

3. Atomic-Order Side-Wail Passivation with Nitrogen in ECR Plasma Etching of Si

Matsuura, T. ; Seino, T. ; Murota, J.

Pub. info.:	Plasma etching processes for sub-quarter micron devices : proceedings of the international symposium. pp.220-225, 1999. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	99-30

Conference Proceedings

4. Side-Wall Protection by B in P-Doped Polysilicon in Gate Etching

Seino, T. ; Fukuchi, A. ; Matsuura, T. ; Murota, J.

Pub. info.:	ULSI Process Integration : proceedings of the International Symposium. pp.324-332, 2001. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2001-2

Conference Proceedings

5. 0.1 μm MOSFET with Super Self-Aligned Shallow Junction Electrodes

Ishii, M. ; Goto, K. ; Sakuraba, M. ; Matsuura, T. ; Murota, J. ; Koyanagi, M.

Pub. info.:	ULSI science and technology, 1997 : proceedings of the Sixth International Symposium on Ultralarge Scale Integration Science and Technology. pp.441-452, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-3

Conference Proceedings

6. Atomic-Order Layer Role-Share Etching of Silicon Nitride Using an ECR Plasma

Honda, Y. ; Matsuura, T. ; Murota, J.

Pub. info.:	Proceedings of the twelfth International Symposium on Plasma Processing. pp.94-100, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-4

Conference Proceedings

7. Surface Adsorption and Reaction of Chlorine on Impurity-Doped Si Using an ECR Plasma

Kanetsuna, T. ; Matsuura, T. ; Murota, J.

Pub. info.:	Plasma processing XIII : proceedings of the international symposium. pp.251-256, 2000. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2000-6

Conference Proceedings

8. High Quality SilxGex Epitaxial Growth by CVD

Murota, J. ; Sakuraba, M. ; Matsuura, T.

Pub. info.:	Proceedings of the Third International Symposium on Defects in Silicon. pp.189-202, 1999. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	99-1

Conference Proceedings

9. ATOMIC-LAYER DOPING OF N IN Si EPITAXIAL GROWTH ON Si(100) AND ITS THERMAL SABILITY

Jeong, Y. ; Sakuraba, M. ; Matsuura, T. ; Murota, J.

Pub. info.:	Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology. pp.287-296, 2002. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-2

10.

Conference Proceedings

10. Super Self-Aligned Processing for Sub 0.1 μm MOS Devices Using Selective Si l-xGexCVD

Kikuchi, T. ; Yamashiro, T. ; Moriya, A. ; Noda, T. ; Yamamoto, Y. ; Deng, C. ; Sakuraba, M. ; Matsuura, T. ; Murota, J.

Pub. info.:	ULSI process integration : proceedings of the first international symposium. pp.147-156, 1999. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	99-18

11.

Conference Proceedings

11. H-TERMINATION ON Ge (100) AND Si (100) BY DILUTED HF DIPPING AND BY ANNEALING IN H2

Sakuraba, M. ; Matsuura, T. ; Murota, J.

Pub. info.:	Proceedings of the Fifth International Symposium on Cleaning Technology in Semiconductor Device Manufacturing. pp.213-220, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-35

12.

Conference Proceedings

12. IN-SITU HEAVY DOPING OF P AND B IN LOW-TEMPERATURE Si 1-X Ge x EPITAXIAL GROWTH USING ULTRACLEAN LPCVD

Murota, J. ; Moriya, A. ; Sakuraba, M. ; Lee, C.J. ; Matsuura, T.

Pub. info.:	Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology. pp.822-833, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-1(1)

13.

Conference Proceedings

13. Atomic-Order Nitridation of Si By Radical- and Ion-Induced Reactions using an Ultraclean ECR Nitrogen Plasma

Seino, T. ; Matsuura, T. ; Murota, J.

Pub. info.:	Proceedings of the Symposium on Fundamental Gas-phase and Surface Chemistry of Vapor-phase Materials Synthesis. pp.191-196, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-23

14.

Conference Proceedings

14. Atomic-Order Nitridation of the H-Terminated and H-Free Si Surfaces by NH3

Watanabe, T. ; Ichikawa, A. ; Sakuraba, M. ; Matsuura, T. ; Murota, J.

Pub. info.:	Chemical vapor deposition : proceedings of the Fourteenth International Conference and EUROCVD-11. pp.97-104, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-25

15.

Conference Proceedings

15. Atomic-Layer Adsorption of P on Si(l00) by Using Ultraclean LPCVD

Shimamune, Y. ; Sakuraba, M. ; Matsuura, T. ; Murota, J.

Pub. info.:	Proceedings of the Symposium on Fundamental Gas-phase and Surface Chemistry of Vapor-phase Materials Synthesis. pp.58-62, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-23

16.

Conference Proceedings

16. Atomic-Layer Nitridation of Si(l 00) By NH3 Using Flash Heating

Watanabe, T. ; Sakuraba, M. ; Matsuura, T. ; Murota, J.

Pub. info.:	Proceedings of the Symposium on Fundamental Gas-phase and Surface Chemistry of Vapor-phase Materials Synthesis. pp.69-74, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-23

17.

Conference Proceedings

17. Thin-Film Composite Membranes Prepared from Sulfonated Poly(phenylene oxide): Preparation, Characterization, and Performance

Chowdhury, G. ; Singh, S. ; Tsang, C. ; Matsuura, T.

Pub. info.:	Membrane formation and modification. pp.125-, 2000. Washington, DC. American Chemical Society
Title of ser.:	ACS symposium series
Ser. no.:	744

18.

Conference Proceedings

18. Effect of Surfactant as an Additive on the Formation of Asymmetric Polysulfone Membranes for Gas Separation

Yamasaki, A. ; Tyagi, R. K. ; Fouda, A. E. ; Jonnason, K. ; Matsuura, T.

Pub. info.:	Membrane formation and modification. pp.87-, 2000. Washington, DC. American Chemical Society
Title of ser.:	ACS symposium series
Ser. no.:	744

19.

Conference Proceedings

19. Phosphorus Diffusion From Doped Si1-xGex Films Into Silicon

Kobayashi, S. ; Iizuka, M. ; Aoki, T. ; Mikoshiba, N. ; Sakuraba, M. ; Matsuura, T. ; Murota, J.

Pub. info.:	Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A.. pp.265-, 1999. Warrendale, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	568

20.

Conference Proceedings

20. Surface Termination of the Ge(100) and Si(100) Surfaces by Using DHF Solution Dipping

Sakuraba, M. ; Matsuura, T. ; Murota, J.

Pub. info.:	III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics : symposium held November 30-December 3, 1998, Boston, Massachusetts, U.S.A.. pp.281-, 1999. Warrendale, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	535

21.

Conference Proceedings

21. Low-Temperature Epitaxial Growth of In Situ Heavily B-Doped Si1-xGex Films Using Ultraclean LPCVD

Moriya, A. ; Sakuraba, M. ; Matsuura, T. ; Murota, J. ; Kawashima, I. ; Yabumoto, N.

Pub. info.:	Epitaxy and applications of si-based heterostructures : symposium held April 13-17, 1998, San Francisco, California, U.S.A.. pp.349-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	533

22.

Conference Proceedings

22. Super Self-Aligned Ultrashallow Junction Formation Using Selective Si1-xGex CVD in Deep-Submicron MOSFET'S Fabrication

Goto, K. ; Murota, J. ; Honma, F. ; Matsuura, T. ; Sawada, Y.

Pub. info.:	ULSI science and technology, 1995 : proceedings of the Fifth International Symposium on Ultra Large Scale Integration Science and Technology. pp.512-518, 1995. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	95-5

23.

Conference Proceedings

23. Comparison of Polysilicon Etching between Pure and Nitrogen Added Chlorine ECR Plasmas

Matsuura, T. ; Murota, J. ; Ono, S. ; Ohmi, T.

Pub. info.:	Proceedings of the Symposium on Highly Selective Dry Etching and Damage Control. pp.141-148, 1993. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1993-21

24.

Conference Proceedings

24. ATOMIC-LAYER DOPING OF N IN Si EPITAXIAL GROWTH ON Si(100) AND ITS THERMAL STABILITY

Jeong, Y. ; Sakuraba, M. ; Matsuura, T. ; Murota, J.

Pub. info.:	Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology. pp.287-296, 2002. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-2

25.

Conference Proceedings

25. Gas and Vapor Adsorption on Polymeric Materials by Inverse Gas Chromatography

Shiyao, Bao ; Sourirajan, S. ; Talbot, F. D. F. ; Matsuura, T.

Pub. info.:	Inverse gas chromatography : characterization of polymers and other materials. pp.59-, 1989. Washington, DC. American Chemical Society
Title of ser.:	ACS symposium series
Ser. no.:	391

26.

Conference Proceedings

26. Mechanical Properties as a Function of Grain Size in Ultrafine Grained Aluminum and Iron Fabricated by ARB and Annealing Process

Tsuji, N. ; Okuno, S. ; Matsuura, T. ; Koizumi, Y. ; Minamino, Y.

Pub. info.:	THERMEC '2003 : International Conference on Processing & Manufacturing of Advanced Materials, July 7-11, 2003, Leganés, Madrid, Spain. pp.2667-2672, 2003. Zuerich-Uetikon, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	426-432

27.

Conference Proceedings

27. Self-Limited Fractional Atomic-Layer Etching of Si

Matsuura, T. ; Suzue, K. ; Murota, I. ; Sawada, Y.

Pub. info.:	ULSI science and technology, 1995 : proceedings of the Fifth International Symposium on Ultra Large Scale Integration Science and Technology. pp.109-115, 1995. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	95-5

28.

Conference Proceedings

28. Selective Growth of W at Very Low Temperatures Using a WF6-SiH4 Gas System

Yamamoto, Y. ; Matsuura, T. ; Murota, J.

Pub. info.:	Proceedings of the Thirteenth International Symposium on Chemical Vapor Deposition. pp.814-820, 1996. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	96-5

29.

Conference Proceedings

29. Atomic-Order Layer Growth of Silicon Nitride Films at Low Temperatures

Watanabe, T. ; Sakuraba, M. ; Matsuura, T. ; Murota, J.

Pub. info.:	Proceedings of the Thirteenth International Symposium on Chemical Vapor Deposition. pp.504-509, 1996. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	96-5

30.

Technical Paper

30. Addition of Carbon Nanofiber to Cold-Work Die Steel by Compression Rotation Shearing Method Under Room Temperature: Effect of Nanofiber Volume Ratio on Frictional and Mechanical Properties.

Tokutake, S. ; Nakayama, N. ; Takeishi, H. ; Matsuura, T.

Pub. info.:	S.M.E. technical paper. 2010. Dearborn, Mich.. Society of Manufacturing Engineers
Title of ser.:	SME Technical Paper : TP
Ser. no.:	2010

31.

Technical Paper

31. Development of a New Generation V8 Engine with Variable Valve Event and Lift.

Miura, H. ; Matsuura, T. ; Murata, T. ; Ikematsu, K.

Pub. info.:	2008 SAE International Powertrains, Fuels and Lubricants Congress : technical paper. 2008. Warrendale, Penn.. Society of Automotive Engineers
Title of ser.:	Society of Automotive Engineers technical paper series
Ser. no.:	2008

32.

Conference Proceedings

32. Optical waveguides using perfluorinated polyimides and their optical device applications (Invited Paper)

Matsuura, T.

Pub. info.:	Linear and Nonlinear Optics of Organic Materials IV. pp.73-80, 2004. Bellingham, Wash.. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	5517

33.

Conference Proceedings

33. Fine gold grating fabrication on glass plate by imprint lithography

Hirai, Y. ; Ushiro, T. ; Kanakugi, T. ; Matsuura, T.

Pub. info.:	Nanofabrication Technologies. pp.74-81, 2003. Bellingham, Wash.. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	5220

Select: Check all | Remove all

Sort order

10 | 50 | 100 / Per Page

33 results

Filtering by: