1.

Conference Proceedings
Conference Proceedings
1. Atomic-Order Side-Wail Passivation with Nitrogen in ECR Plasma Etching of Si
Matsuura, T. ; Seino, T. ; Murota, J.
Pub. info.: Plasma etching processes for sub-quarter micron devices : proceedings of the international symposium.  pp.220-225,  1999.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-30
2.

Conference Proceedings
Conference Proceedings
2. Side-Wall Protection by B in P-Doped Polysilicon in Gate Etching
Seino, T. ; Fukuchi, A. ; Matsuura, T. ; Murota, J.
Pub. info.: ULSI Process Integration : proceedings of the International Symposium.  pp.324-332,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-2
3.

Conference Proceedings
Conference Proceedings
3. Atomic-Order Nitridation of Si By Radical- and Ion-Induced Reactions using an Ultraclean ECR Nitrogen Plasma
Seino, T. ; Matsuura, T. ; Murota, J.
Pub. info.: Proceedings of the Symposium on Fundamental Gas-phase and Surface Chemistry of Vapor-phase Materials Synthesis.  pp.191-196,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-23