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15 results

Conference Proceedings

1. Phosphorus Doping Effects on Si1-xGex Epitaxial Film Growth in the SiH4-GeH4-PH3 Gas System Using Ultraclean LPCVD

Lee, C.J. ; Sakuraba, M. ; Ishii, M. ; Matsuura, T. ; Murota, J. ; Kawashima, I. ; Yabumoto, N.

Pub. info.:	Chemical vapor deposition : proceedings of the Fourteenth International Conference and EUROCVD-11. pp.1356-1363, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-25

Conference Proceedings

2. 0.1 μm MOSFET with Super Self-Aligned Shallow Junction Electrodes

Ishii, M. ; Goto, K. ; Sakuraba, M. ; Matsuura, T. ; Murota, J. ; Koyanagi, M.

Pub. info.:	ULSI science and technology, 1997 : proceedings of the Sixth International Symposium on Ultralarge Scale Integration Science and Technology. pp.441-452, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-3

Conference Proceedings

3. High Quality SilxGex Epitaxial Growth by CVD

Murota, J. ; Sakuraba, M. ; Matsuura, T.

Pub. info.:	Proceedings of the Third International Symposium on Defects in Silicon. pp.189-202, 1999. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	99-1

Conference Proceedings

4. ATOMIC-LAYER DOPING OF N IN Si EPITAXIAL GROWTH ON Si(100) AND ITS THERMAL SABILITY

Jeong, Y. ; Sakuraba, M. ; Matsuura, T. ; Murota, J.

Pub. info.:	Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology. pp.287-296, 2002. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-2

Conference Proceedings

5. Super Self-Aligned Processing for Sub 0.1 μm MOS Devices Using Selective Si l-xGexCVD

Kikuchi, T. ; Yamashiro, T. ; Moriya, A. ; Noda, T. ; Yamamoto, Y. ; Deng, C. ; Sakuraba, M. ; Matsuura, T. ; Murota, J.

Pub. info.:	ULSI process integration : proceedings of the first international symposium. pp.147-156, 1999. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	99-18

Conference Proceedings

6. H-TERMINATION ON Ge (100) AND Si (100) BY DILUTED HF DIPPING AND BY ANNEALING IN H2

Sakuraba, M. ; Matsuura, T. ; Murota, J.

Pub. info.:	Proceedings of the Fifth International Symposium on Cleaning Technology in Semiconductor Device Manufacturing. pp.213-220, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-35

Conference Proceedings

7. IN-SITU HEAVY DOPING OF P AND B IN LOW-TEMPERATURE Si 1-X Ge x EPITAXIAL GROWTH USING ULTRACLEAN LPCVD

Murota, J. ; Moriya, A. ; Sakuraba, M. ; Lee, C.J. ; Matsuura, T.

Pub. info.:	Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology. pp.822-833, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-1(1)

Conference Proceedings

8. Atomic-Order Nitridation of the H-Terminated and H-Free Si Surfaces by NH3

Watanabe, T. ; Ichikawa, A. ; Sakuraba, M. ; Matsuura, T. ; Murota, J.

Pub. info.:	Chemical vapor deposition : proceedings of the Fourteenth International Conference and EUROCVD-11. pp.97-104, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-25

Conference Proceedings

9. Atomic-Layer Adsorption of P on Si(l00) by Using Ultraclean LPCVD

Shimamune, Y. ; Sakuraba, M. ; Matsuura, T. ; Murota, J.

Pub. info.:	Proceedings of the Symposium on Fundamental Gas-phase and Surface Chemistry of Vapor-phase Materials Synthesis. pp.58-62, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-23

10.

Conference Proceedings

10. Atomic-Layer Nitridation of Si(l 00) By NH3 Using Flash Heating

Watanabe, T. ; Sakuraba, M. ; Matsuura, T. ; Murota, J.

Pub. info.:	Proceedings of the Symposium on Fundamental Gas-phase and Surface Chemistry of Vapor-phase Materials Synthesis. pp.69-74, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-23

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