1.

Conference Proceedings
Conference Proceedings
1. Super Self-Aligned Processing for Sub 0.1 μm MOS Devices Using Selective Si l-xGexCVD
Kikuchi, T. ; Yamashiro, T. ; Moriya, A. ; Noda, T. ; Yamamoto, Y. ; Deng, C. ; Sakuraba, M. ; Matsuura, T. ; Murota, J.
Pub. info.: ULSI process integration : proceedings of the first international symposium.  pp.147-156,  1999.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-18
2.

Conference Proceedings
Conference Proceedings
2. IN-SITU HEAVY DOPING OF P AND B IN LOW-TEMPERATURE Si 1-X Ge x EPITAXIAL GROWTH USING ULTRACLEAN LPCVD
Murota, J. ; Moriya, A. ; Sakuraba, M. ; Lee, C.J. ; Matsuura, T.
Pub. info.: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology.  pp.822-833,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-1(1)
3.

Conference Proceedings
Conference Proceedings
3. Low-Temperature Epitaxial Growth of In Situ Heavily B-Doped Si1-xGex Films Using Ultraclean LPCVD
Moriya, A. ; Sakuraba, M. ; Matsuura, T. ; Murota, J. ; Kawashima, I. ; Yabumoto, N.
Pub. info.: Epitaxy and applications of si-based heterostructures : symposium held April 13-17, 1998, San Francisco, California, U.S.A..  pp.349-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 533