1.

Conference Proceedings
Conference Proceedings
1. Reduction in Al Acceptor Density by Electron Irradiation in Al-Doped 4H-SiC
Matsuura, H. ; Aso, K. ; Kagamihara, S. ; Iwata, H. ; Ishida, T. ; Nishikawa, K.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.751-754,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
2.

Conference Proceedings
Conference Proceedings
2. Real Relationship between Acceptor Density and Hole Concentration in Al-Implanted 4H-SiC
Matsuura, H. ; Sugiyama, K. ; Nishikawa, K. ; Nagata, T. ; Fukunaga, N.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.447-450,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436